HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Mga Resulta: 720
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Kuwalipikasyon Pangalang pangkalakal Packaging
IXYS MOSFETs 500V 60A 0.1Ohm PolarP3 Power MOSFET Lead-Time para sa Hindi Naka-stock 26 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 500 V 60 A 100 mOhms - 30 V, 30 V 5 V 96 nC 1.04 mW HiPerFET Tube
IXYS MOSFETs DiscMSFT NCh UltrJnctn XClass TO-3P (3) Hindi Naka-stock
Min.: 1
Mult.: 1
Si Through Hole TO-3P-3 N-Channel 1 Channel 600 V 60 A 55 mOhms - 30 V, 30 V 2.5 V 143 nC - 55 C + 150 C 890 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-3P (3) Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 200 V 72 A 20 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-3P (3) Lead-Time para sa Hindi Naka-stock 27 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 200 V 90 A 12.8 mOhms - 20 V, 20 V 2.5 V 78 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube

IXYS MOSFETs 54 Amps 300V 0.033 Rds Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 60 A 36 mOhms - 20 V, 20 V 5 V 224 nC - 55 C + 150 C 250 W Enhancement HiPerFET Tube

IXYS MOSFETs 16 Amps 1200V 1 Rds Hindi Naka-stock
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 9 A 1.04 Ohms - 30 V, 30 V - 55 C + 150 C 230 W Enhancement HiPerFET Tube

IXYS MOSFETs Polar HiperFET Power MOSFET Hindi Naka-stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 HiPerFET Tube

IXYS MOSFETs 180 Amps 70V 0.006 Rds Hindi Naka-stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 70 V 180 A 6 mOhms - 20 V, 20 V - 55 C + 150 C 400 W Enhancement HiPerFET Tube

IXYS MOSFETs 94 Amps 150V 0.011 Rds Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 100 A 13 mOhms - 20 V, 20 V 5 V 240 nC - 55 C + 175 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 10.5 A 660 mOhms - 30 V, 30 V - 55 C + 150 C 200 W HiPerFET Tube

IXYS MOSFETs 133 Amps 100V 0.0075 Rds Lead-Time para sa Hindi Naka-stock 39 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 133 A 9 mOhms - 20 V, 20 V 5 V 235 nC - 55 C + 175 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs 26 Amps 1200V 1 Rds Lead-Time para sa Hindi Naka-stock 49 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 13 A 630 mOhms - 30 V, 30 V - 55 C + 150 C 290 W Enhancement HiPerFET Tube

IXYS MOSFETs 10 Amps 800V 0.5 Rds Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 10 A 570 mOhms - 30 V, 30 V - 55 C + 150 C 166 W Enhancement HiPerFET Tube

IXYS MOSFETs GigaMOS Power MOSFET Lead-Time para sa Hindi Naka-stock 25 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 200 V 156 A 8 mOhms - 20 V, 20 V 3 V 358 nC - 55 C + 175 C 600 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/18A Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 18 A 490 mOhms - 30 V, 30 V 140 nC 500 W HiPerFET Tube

IXYS MOSFETs 14 Amps 800V 0.42 Rds Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 13 A 420 mOhms - 30 V, 30 V 5 V 105 nC - 55 C + 150 C 208 W Enhancement HiPerFET Tube

IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 900 V 13 A 460 mOhms - 30 V, 30 V 58 nC - 55 C + 150 C 230 W HiPerFET Tube

IXYS MOSFETs 26 Amps 1000V 0.39 Rds Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 15 A 430 mOhms - 30 V, 30 V 6.5 V 197 nC - 55 C + 150 C 290 W Enhancement HiPerFET Tube

IXYS MOSFETs 32 Amps 1200V 0.46 Rds Hindi Naka-stock
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 15 A 500 mOhms - 30 V, 30 V 6.5 V 225 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 30A Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 15 A 250 mOhms - 30 V, 30 V - 55 C + 150 C 166 W Enhancement HiPerFET Tube

IXYS MOSFETs 32 Amps 1000V Lead-Time para sa Hindi Naka-stock 35 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 18 A 340 mOhms - 30 V, 30 V - 55 C + 150 C 320 W Enhancement HiPerFET Tube

IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/23A Lead-Time para sa Hindi Naka-stock 36 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 23 A 350 mOhms - 30 V, 30 V 3.5 V 195 nC - 55 C + 150 C 570 W Enhancement HiPerFET Tube

IXYS MOSFETs 20 Amps 800V 0.29 Rds Lead-Time para sa Hindi Naka-stock 46 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 800 V 20 A 290 mOhms - 30 V, 30 V 5 V 150 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube

IXYS MOSFETs 600V 20A Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 20 A 200 mOhms - 30 V, 30 V 3 V 102 nC - 55 C + 150 C 208 W Enhancement HiPerFET Tube

IXYS MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds Lead-Time para sa Hindi Naka-stock 37 (na) Linggo
Min.: 300
Mult.: 30

Si Through Hole TO-247-3 N-Channel 1 Channel 900 V 21 A 230 mOhms - 30 V, 30 V 6.5 V 230 nC - 55 C + 150 C 300 W HiPerFET Tube