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IPW60R024CFD7XKSA1

Name: Infineon IPW60R024CFD7XKSA1
Brand: Infineon Technologies
SKU: 726-IPW60R024CFD7XKS
Price: 776.62 PHP
Availability: InStock

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Mouser #:

726-IPW60R024CFD7XKS

Mfr. #:

IPW60R024CFD7XKSA1

Mfr.:

Infineon Technologies

Paglalarawan:

MOSFETs HIGH POWER_NEW

Datasheet:

IPW60R024CFD7XKSA1 Datasheet (PDF)

ECAD Model:

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Higit Pang Impormasyon

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May Stock: 178

Stock:: 178

Maaaring Ipadala Agad

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Inoorder:: 240

Inaasahan 2/16/2026
Lead-Time ng Pabrika:: 52

(na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱776.62	₱776.62
	₱466.90	₱11,672.50
	₱404.26	₱40,426.00
	₱403.68	₱96,883.20
	₱390.34	₱187,363.20

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	77 A
Rds On - Drain-Source Resistance:	24 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	183 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	320 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Kumpigurasyon:	Single
Uri ng Produkto:	MOSFETs
Series:	IPW60R024CFD7
Dami ng Pack ng Pabrika:	240
Subcategory:	Transistors
Mga Alias ng # ng Piyesa :	IPW60R024CFD7 SP002621050
Timbang ng Unit:	6 g

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Mga Piniling Attribute: 0

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Datasheet

IPW60R024CFD7XKSA1 Datasheet (PDF)

Models

IPW60R024CFD7XKSA1 Symbol & Footprint by SnapMagic

Product Catalogs

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

CFD7 CoolMOS™ MOSFETs

Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power switch-mode power supply (SMPS) applications include server, telecom, and EV charging stations.

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.