IXFA102N15T

IXYS
747-IXFA102N15T
IXFA102N15T

Mfr.:

Paglalarawan:
MOSFETs 102 Amps 150V

ECAD Model:
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Availability

Stock:
Hindi Naka-stock
Lead-Time ng Pabrika:
23 (na) Linggo Tinatayang oras ng paggawa sa pabrika.
Minimum: 300   Mga Multiple: 50
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
LIBRENG Ipapadala ang Produktong Ito

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱185.60 ₱55,680.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
IXYS
Kategorya ng Produkto: Mga MOSFET
REACH - SVHC:
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
150 V
102 A
HiPerFET
Tube
Brand: IXYS
Kumpigurasyon: Single
Bansa ng Pag-assemble: Not Available
Bansa ng Diffusion: Not Available
Bansang Pinagmulan: KR
Uri ng Produkto: MOSFETs
Dami ng Pack ng Pabrika: 50
Subcategory: Transistors
Uri ng Transistor: 1 N-Channel
Timbang ng Unit: 4 g
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Mga Piniling Attribute: 0

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CNHTS:
8541590000
USHTS:
8541290065
TARIC:
8541500000
MXHTS:
85415001
ECCN:
EAR99

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.