Tila naka-disable ang JavaScript sa loob ng iyong browser. Hindi gagana ang ilang function sa page na ito maliban kung mag-log in ka.

May Nakikitang Error?

IXFH340N075T2

Name: IXYS IXFH340N075T2
Brand: IXYS
SKU: 747-IXFH340N075T2
Price: 735.44 PHP
Availability: InStock

Reference lang ang mga larawan
Tingnan ang Mga Ispesipikasyon ng Produkto

Mouser #:

747-IXFH340N075T2

Mfr. #:

IXFH340N075T2

Mfr.:

IXYS

Paglalarawan:

MOSFETs TRENCHT2 HIPERFET PWR MOSFET 75V 340A

Datasheet:

IXFH340N075T2 Datasheet

ECAD Model:

I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

Higit Pang Impormasyon

Alamin pa ang tungkol sa IXYS IXFH340N075T2

May Stock: 1,481

Stock:: 1,481 Maaaring Ipadala Agad

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 23 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱735.44	₱735.44
	₱451.24	₱4,512.40
	₱436.74	₱52,408.80
2,520	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	IXYS
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	75 V
Id - Continuous Drain Current:	340 A
Rds On - Drain-Source Resistance:	3.2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	300 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	935 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	35 ns
Forward Transconductance - Min:	65 S
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	50 ns
Series:	IXFH340N075
Dami ng Pack ng Pabrika:	30
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	60 ns
Karaniwang Tagal ng Delay ng Pag-on:	26 ns
Timbang ng Unit:	6 g

Nahanap na mga produkto:

Para maipakita ang mga katulad na produkto, pumili ng kahit na isang checkbox man lang

Pumili ng kahit isang checkbox sa itaas para magpakita ng katulad na produkto sa kategoryang ito.

Mga Piniling Attribute: 0

I-filter ang Dokumento:

Datasheet

IXFH340N075T2 Datasheet

PCN

Product Change Notification (PDF)

Kailangang i-enable ang JavaScript para gumana ito.

CNHTS:: 8541290000
TARIC:: 8541900000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 8541900299
ECCN:: EAR99

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Gen2 Trench Gate Power MOSFETs

IXYS Gen2 Trench Gate Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (T_C=@25°C). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These IXYS devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.