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IXFN62N80Q3

Name: IXYS IXFN62N80Q3
Brand: IXYS
SKU: 747-IXFN62N80Q3
Price: 2782.84 PHP
Availability: InStock

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Mouser #:

747-IXFN62N80Q3

Mfr. #:

IXFN62N80Q3

Mfr.:

IXYS

Paglalarawan:

MOSFET Modules Q3Class HiPerFET Pwr MOSFET 800V/49A

Datasheet:

IXFN62N80Q3 Datasheet

ECAD Model:

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May Stock: 212

Stock:: 212 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 27 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ang mga dami na higit pa sa 212 ay sasailalim sa minimum na mga kinakailangan sa pag-order.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

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Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱2,782.84	₱2,782.84
	₱2,617.54	₱26,175.40
	₱2,615.80	₱261,580.00
500	Quote

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	IXYS
Kategorya ng Produkto:	Mga MOSFET Module
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	Screw Mount
Package / Case:	SOT-227-4
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	49 A
Rds On - Drain-Source Resistance:	140 mOhms
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	960 W
Series:	IXFN62N80
Packaging:	Tube
Brand:	IXYS
Kumpigurasyon:	Single
Uri ng Produkto:	MOSFET Modules
Tagal ng Pagtaas:	300 ns
Dami ng Pack ng Pabrika:	10
Subcategory:	Discrete and Power Modules
Pangalang pangkalakal:	HiPerFET
Uri:	HiperFET
Timbang ng Unit:	30 g

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Datasheet

IXFN62N80Q3 Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541900000
MXHTS:: 8541900299
ECCN:: EAR99

Q3-Class HiperFET™ Power MOSFETs

IXYS Q3-Class HiperFET™ Power MOSFETs provide the end-user with a broad range of devices with exceptional power-switching performance. They also offer excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. These MOSFETs come with drain-to-source voltage ratings of 200V to 1000V and drain current ratings of 10A to 100A. These features make the Q3-Class an optimized combination of low on-state resistance (R_dson) and gate charge (Q_g), substantially reducing the device's conduction and switching loss. Power switching capabilities and device ruggedness are further enhanced by utilizing the HiperFET process. This process yields a device with a fast intrinsic rectifier, which provides for a low reverse recovery charge (Q_rr) while enhancing the device's commutating dv/dt ratings (up to 50V/ns).

HiPerFET Power MOSFETs

IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances. These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types. View all .