IXTH180N10T

IXYS
747-IXTH180N10T
IXTH180N10T

Mfr.:

Paglalarawan:
MOSFETs 180 Amps 100V 6.1 Rds

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 1,213

Stock:
1,213
Maaaring Ipadala Agad
Inoorder:
90
Inaasahan 5/6/2026
Lead-Time ng Pabrika:
23
(na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱491.26 ₱491.26
₱288.26 ₱2,882.60
₱243.02 ₱29,162.40
₱216.34 ₱110,333.40
₱215.76 ₱220,075.20

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
IXYS
Kategorya ng Produkto: Mga MOSFET
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
100 V
180 A
6.4 mOhms
- 55 C
+ 175 C
480 W
Enhancement
HiPerFET
Tube
Brand: IXYS
Kumpigurasyon: Single
Bansa ng Pag-assemble: Not Available
Bansa ng Diffusion: Not Available
Bansang Pinagmulan: KR
Tagal ng Pagbagsak: 31 ns
Uri ng Produkto: MOSFETs
Tagal ng Pagtaas: 54 ns
Series: IXTH180N10
Dami ng Pack ng Pabrika: 30
Subcategory: Transistors
Uri ng Transistor: 1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off: 42 ns
Karaniwang Tagal ng Delay ng Pag-on: 33 ns
Timbang ng Unit: 6 g
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Mga Piniling Attribute: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541500000
MXHTS:
85415001
ECCN:
EAR99

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.