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IPD60R180CM8XTMA1

Name: Infineon IPD60R180CM8XTMA1
Brand: Infineon Technologies
SKU: 726-IPD60R180CM8XTMA
Price: 117.74 PHP
Availability: InStock

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Mouser #:

726-IPD60R180CM8XTMA

Mfr. #:

IPD60R180CM8XTMA1

Mfr.:

Infineon Technologies

Paglalarawan:

MOSFETs HIGH POWER_NEW

Lifecycle:

Bagong Produkto:

Bago mula sa manufacturer na ito.

Datasheet:

IPD60R180CM8XTMA1 Datasheet (PDF)

ECAD Model:

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May Stock: 1,925

Stock:: 1,925 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 8 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱117.74	₱117.74
	₱79.46	₱794.60
	₱56.96	₱5,696.00
	₱49.01	₱24,505.00
	₱46.34	₱46,340.00
Buo Reel (Mag-order sa multiple ng 2500)
	₱39.32	₱98,300.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	TO-252-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	180 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.7 V
Qg - Gate Charge:	17 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	127 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	CoolMOS
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	12.8 ns
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	6 ns
Series:	600V CM8
Dami ng Pack ng Pabrika:	2500
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	88.4 ns
Karaniwang Tagal ng Delay ng Pag-on:	17.2 ns
Mga Alias ng # ng Piyesa :	IPD60R180CM8 SP005578057

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Mga Piniling Attribute: 0

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Datasheet

IPD60R180CM8XTMA1 Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.

650V CoolMOS™ CFD7A SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7A SJ Power MOSFETs address electric vehicle applications such as on-board chargers, HV-LV DC-DC converters, and auxiliary power supplies. Thanks to the improved cosmic radiation robustness, the CoolMOS CFD7A SJ Power MOSFETs allow higher battery voltages to be applied at a reliability rate equal to that of previous generations and other market offerings. CoolMOS CFD7A SJ Power MOSFETs ensure high-efficiency levels in hard- and resonant switching topologies, particularly at light load conditions. Higher switching frequencies at gate loss levels comparable to those of former generations are reached. The reduction in system weight and the smaller occupied space result in more compact designs.

CoolMOS™ 8 SJ MOSFETs

Infineon Technologies CoolMOS™ 8 SJ MOSFETs are high-voltage super-junction MOSFET technology solutions. The Infineon Technologies CoolMOS 8 has an integrated fast body diode and is ideal for diverse applications. The CoolMOS 8 enhances Infineon's wide-bandgap (WBG) portfolio as the successor to the 600V CoolMOS 7 MOSFET family.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.