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MSC080SMA120J

Name: Microchip MSC080SMA120J
Brand: Microchip Technology
SKU: 494-MSC080SMA120J
Price: 1670.4 PHP
Availability: InStock

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Mouser #:

494-MSC080SMA120J

Mfr. #:

MSC080SMA120J

Mfr.:

Microchip Technology

Paglalarawan:

MOSFET Modules MOSFET SIC 1200 V 80 mOhm SOT-227

Tingnan sa Development Tools Selector

Datasheet:

MSC080SMA120J Datasheet (PDF)

ECAD Model:

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May Stock: 33

Stock:: 33 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 8 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱1,670.40	₱1,670.40
	₱1,473.78	₱14,737.80
	₱1,443.62	₱43,308.60
	₱1,259.18	₱125,918.00
1,000	Quote

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Microchip
Kategorya ng Produkto:	Mga MOSFET Module
RoHS:
Teknolohiya:	SiC
Isitilo ng Mounting:	Screw Mount
Package / Case:	SOT-227-4
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	37 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	200 W
Packaging:	Tube
Brand:	Microchip Technology
Kumpigurasyon:	Single
Uri ng Produkto:	MOSFET Modules
Dami ng Pack ng Pabrika:	10
Subcategory:	Discrete and Power Modules
Uri:	Power MOSFET
Timbang ng Unit:	47.178 g

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Datasheet

MSC080SMA120J Datasheet (PDF)

DTS

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PCN

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Silicon Carbide (SiC) Semiconductors

Microchip Technology Silicon Carbide (SiC) Semiconductors are an innovative option for power electronic designers looking to improve system efficiency, smaller form factor, and higher operating temperature in products covering industrial, medical, military/aerospace, aviation, and communication market segments. Microchip's next-generation SiC MOSFETs and SiC Schottky Barrier Diodes (SBDs) are designed with high repetitive Unclamped Inductive Switching (UIS) capability, and its SiC MOSFETs maintain high UIS capability at approximately 10J/cm² to 15J/cm² and robust short-circuit protection at 3ms to 5ms. The Microchip Technology SiC SBDs are designed with balanced surge current, forward voltage, thermal resistance, and thermal capacitance ratings at low reverse currents for lower switching loss. In addition, SiC MOSFET and SiC SBD can be paired together for use in modules.

Silicon Carbide (SiC) MOSFETs

Microchip Technology Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. These MOSFETs have low capacitances, low gate charge, fast switching speed, and good avalanche ruggedness. The SiC MOSFETs can stabilize operation at 175°C high junction temperature. These MOSFETs provide high efficiency with low switching losses. The SiC MOSFETs do not require any freewheeling diodes. Typical applications include smart grid transmission and distribution, induction heating and welding, and power supply and distribution.