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SCT070W120G3-4AG

Name: STMicroelectronics SCT070W120G3-4AG
Brand: STMicroelectronics
SKU: 511-SCT070W120G3-4AG
Price: 733.12 PHP
Availability: InStock

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Mouser #:

511-SCT070W120G3-4AG

Mfr. #:

SCT070W120G3-4AG

Mfr.:

STMicroelectronics

Paglalarawan:

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

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Datasheet:

SCT070W120G3-4AG Datasheet (PDF)

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May Stock: 403

Stock:: 403

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Inoorder:: 1,200
Lead-Time ng Pabrika:: 22

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Presyo ng Unit:

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Ext. Presyo:

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Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱733.12	₱733.12
	₱603.78	₱6,037.80
	₱463.42	₱46,342.00
	₱414.12	₱248,472.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	HiP-247-4
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	87 mOhms
Vgs - Gate-Source Voltage:	- 18 V, + 18 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	41 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 200 C
Pd - Power Dissipation:	236 W
Channel Mode:	Enhancement
Kuwalipikasyon:	AEC-Q101
Brand:	STMicroelectronics
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	IT
Tagal ng Pagbagsak:	17 ns
Packaging:	Tube
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	4.8 ns
Dami ng Pack ng Pabrika:	600
Subcategory:	Transistors
Teknolohiya:	SiC
Karaniwang Tagal ng Delay ng Pag-off:	23 ns
Karaniwang Tagal ng Delay ng Pag-on:	9.5 ns

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Datasheet

SCT070W120G3-4AG Datasheet (PDF)

PCN

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

SCTW70N120G2V 1200V 91A SiC Power MOSFETs

STMicroelectronics SCTW70N120G2V 1200V 91A SiC (Silicon Carbide) Power MOSFET features minimal ON-resistance and excellent switching performance, almost independent of temperature, due to the advanced, innovative properties of wide bandgap materials. The SCTW70N120G2V also offers a high-speed, robust intrinsic body diode and extremely low gate charge and input capacities. A high-temperature rating of +200°C enables the improved thermal design of power electronics systems.

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.