SGT070R70HTO

STMicroelectronics
511-SGT070R70HTO
SGT070R70HTO

Mfr.:

Paglalarawan:
GaN FETs 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor

Lifecycle:
Bagong Produkto:
Bago mula sa manufacturer na ito.
ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 327

Stock:
327 Maaaring Ipadala Agad
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
Packaging:
Buo Reel (Mag-order sa multiple ng 1800)

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
Cut Tape / MouseReel™
₱452.40 ₱452.40
₱324.22 ₱3,242.20
₱283.04 ₱28,304.00
₱274.92 ₱137,460.00
₱269.70 ₱269,700.00
Buo Reel (Mag-order sa multiple ng 1800)
₱262.74 ₱472,932.00
3,600 Quote
† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
STMicroelectronics
Kategorya ng Produkto: GaN FETs
RoHS:  
SMD/SMT
TO-LL-11
700 V
26 A
70 mOhms
- 6 V, + 7 V
2.5 V
8.5 nC
- 55 C
+ 150 C
231 W
Enhancement
Brand: STMicroelectronics
Kumpigurasyon: Single
Tagal ng Pagbagsak: 9 ns
Maselan sa Moisture: Yes
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Produkto: FET
Uri ng Produkto: GaN FETs
Tagal ng Pagtaas: 9 ns
Series: SGT
Dami ng Pack ng Pabrika: 1800
Subcategory: Transistors
Teknolohiya: GaN
Uri: PowerGaN Transistor
Karaniwang Tagal ng Delay ng Pag-off: 7 ns
Karaniwang Tagal ng Delay ng Pag-on: 10 ns
Timbang ng Unit: 697 mg
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Mga Piniling Attribute: 0

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

SGT070R70HTO E-Mode PowerGaN Transistor

STMicroelectronics SGT070R70HTO E-Mode PowerGaN Transistor is a high-performance enhancement-mode transistor designed for demanding power conversion applications. Built on Gallium Nitride (GaN) technology, the STMicro SGT070R70HTO offers superior switching performance with a low on-resistance of 70mΩ and minimal gate charge, enabling high efficiency and reduced losses in high-frequency operations. With a 700V drain-source voltage rating, the transistor is ideal for applications such as power supplies, motor drives, and renewable energy systems. The device features robust thermal performance and is housed in a compact TO-LL package, making it suitable for designs where space and heat management are critical. Fast switching capability and low input capacitance contribute to improved system efficiency and power density, positioning the SGT070R70HTO as a strong choice for next-generation power electronics.