STB33N65M2

STMicroelectronics
511-STB33N65M2
STB33N65M2

Mfr.:

Paglalarawan:
MOSFETs N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in D2PAK package

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 4,482

Stock:
4,482 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
14 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
Packaging:
Buo Reel (Mag-order sa multiple ng 1000)

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
Cut Tape / MouseReel™
₱292.90 ₱292.90
₱194.88 ₱1,948.80
₱139.20 ₱13,920.00
₱132.24 ₱66,120.00
Buo Reel (Mag-order sa multiple ng 1000)
₱107.30 ₱107,300.00
† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
STMicroelectronics
Kategorya ng Produkto: Mga MOSFET
RoHS:  
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
650 V
24 A
140 mOhms
- 20 V, 20 V
2 V
41.5 nC
- 55 C
+ 150 C
190 W
Enhancement
MDmesh
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Kumpigurasyon: Single
Tagal ng Pagbagsak: 9 ns
Uri ng Produkto: MOSFETs
Tagal ng Pagtaas: 11.5 ns
Series: STB33N65M2
Dami ng Pack ng Pabrika: 1000
Subcategory: Transistors
Uri ng Transistor: 1 N-Channel Power MOSFET
Karaniwang Tagal ng Delay ng Pag-off: 72.5 ns
Karaniwang Tagal ng Delay ng Pag-on: 13.5 ns
Timbang ng Unit: 4 g
Nahanap na mga produkto:
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Mga Piniling Attribute: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.