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STDRIVEG211Q

Name: STMicroelectronics STDRIVEG211Q
Brand: STMicroelectronics
SKU: 511-STDRIVEG211Q
Price: 163.03 PHP
Availability: InStock

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Mouser #:

511-STDRIVEG211Q

Mfr. #:

STDRIVEG211Q

Mfr.:

STMicroelectronics

Paglalarawan:

Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches 220V

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Bagong Produkto:

Bago mula sa manufacturer na ito.

Datasheet:

STDRIVEG211Q Datasheet (PDF)

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May Stock: 664

Stock:: 664 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 52 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱163.03	₱163.03
	₱121.98	₱1,219.80
	₱111.27	₱2,781.75
	₱99.96	₱9,996.00
	₱94.61	₱23,652.50
	₱90.44	₱44,315.60
	₱85.68	₱83,966.40
	₱82.11	₱241,403.40
	₱81.52	₱439,392.80

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga Gate Driver
RoHS:
Produkto:	Gate Drivers
Uri:	Half-Bridge
Isitilo ng Mounting:	SMD/SMT
Package / Case:	QFN-18
Dami ng Driver:	2 Driver
Dami ng Output:	3 Output
Current ng Output:	1 A, 2.4 A
Supply Voltage - Min:	3.3 V
Supply Voltage - Max:	20 V
Kumpigurasyon:	Inverting
Tagal ng Pagtaas:	22 ns
Tagal ng Pagbagsak:	11 ns
Minimum na Operating Temperature:	- 40 C
Maximum na Operating Temperature:	+ 125 C
Packaging:	Tray
Brand:	STMicroelectronics
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	TH
Kit sa Pag-develop:	EVLSTDRIVEG611
Maselan sa Moisture:	Yes
Supply Current ng Pagpapatakbo:	1.02 nA
Output Voltage:	220 V
Uri ng Produkto:	Gate Drivers
Propagation Delay - Max:	60 ns
Rds On - Drain-Source Resistance:	7 Ohms
Shutdown:	Shutdown
Dami ng Pack ng Pabrika:	490
Subcategory:	PMIC - Power Management ICs
Teknolohiya:	GaN

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Datasheet

STDRIVEG211Q Datasheet (PDF)

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USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

STDRIVEG600/210/211 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG600 and STDRIVEG210/211 Half-Bridge Gate Drivers are single-chip half-bridge gate drivers for GaN (Gallium Nitride) eHEMTs (Enhancement-mode High-Electron-Mobility Transistors) or N-channel power MOSFETs. The high side of the STDRIVEG600 is designed to withstand voltages up to 600V and is suitable for designs with bus voltage up to 500V. These devices are ideal for driving high-speed GaN and silicon FETs due to high current capability, short propagation delay, and operation with a supply voltage down to 5V.

STDRIVEG211 Half-Bridge Gate Drivers

STMicroelectronics STDRIVEG211 Half-Bridge Gate Drivers are designed for N‑channel enhancement mode GaN, and the high-side driver section can withstand a voltage rail up to 220V. These drivers feature high current capability, short propagation delay with excellent delay matching, and integrated LDOs. This makes them optimized for driving high-speed GaN. The STDRIVEG211 half-bridge gate drivers feature supply UVLOs tailored to hard switching applications, interlocking to avoid cross-conduction conditions, and an overcurrent comparator with SmartSD. These drivers offer an extended range for input pins that allows easy interfacing with controllers. A standby pin allows for reducing the power consumption during inactive periods or burst mode. Applications include solar micro inverters, Class D audio amplifiers, E-bikes, LED lighting, USB-C, power tools, and robotics.