STF15N80K5

STMicroelectronics
511-STF15N80K5
STF15N80K5

Mfr.:

Paglalarawan:
MOSFETs N-Ch 800V 0.3Ohm 14A pwr MOSFET

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 15

Stock:
15 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
14 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Ang mga dami na higit pa sa 15 ay sasailalim sa minimum na mga kinakailangan sa pag-order.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱265.06 ₱265.06
₱154.28 ₱1,542.80
₱116.00 ₱11,600.00
₱95.70 ₱47,850.00
₱88.74 ₱88,740.00
₱86.42 ₱172,840.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
STMicroelectronics
Kategorya ng Produkto: Mga MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
800 V
14 A
300 mOhms
- 30 V, 30 V
4 V
32 nC
- 55 C
+ 150 C
35 W
Enhancement
MDmesh
Tube
Brand: STMicroelectronics
Kumpigurasyon: Single
Tagal ng Pagbagsak: 10 ns
Uri ng Produkto: MOSFETs
Tagal ng Pagtaas: 17.6 ns
Series: STF15N80K5
Dami ng Pack ng Pabrika: 1000
Subcategory: Transistors
Uri ng Transistor: 1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off: 44 ns
Karaniwang Tagal ng Delay ng Pag-on: 19 ns
Timbang ng Unit: 2 g
Nahanap na mga produkto:
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Pumili ng kahit isang checkbox sa itaas para magpakita ng katulad na produkto sa kategoryang ito.
Mga Piniling Attribute: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541210000
MXHTS:
85412101
ECCN:
EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best RDS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.