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STFW38N65M5

Name: STMicroelectronics STFW38N65M5
Brand: STMicroelectronics
SKU: 511-STFW38N65M5
Price: 368.3 PHP
Availability: InStock

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Mouser #:

511-STFW38N65M5

Mfr. #:

STFW38N65M5

Mfr.:

STMicroelectronics

Paglalarawan:

MOSFETs N-channel 650 V, 0.073 Ohm typ., 30 A MDmesh M5 Power MOSFET in TO-3PF package

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Datasheet:

STFW38N65M5 Datasheet (PDF)

ECAD Model:

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May Stock: 137

Stock:: 137 Maaaring Ipadala Agad

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 14 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱368.30	₱368.30
	₱281.88	₱2,818.80
	₱227.94	₱22,794.00
	₱202.42	₱121,452.00
	₱173.42	₱208,104.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-3PF-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	30 A
Rds On - Drain-Source Resistance:	95 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	71 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	57 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	9 ns
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	9 ns
Series:	Mdmesh M5
Dami ng Pack ng Pabrika:	300
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Timbang ng Unit:	7 g

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Mga Piniling Attribute: 0

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Datasheet

STFW38N65M5 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

N-channel MDmesh V Power MOSFET

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding R_DS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.

MDMesh™ N-Channel Power MOSFETs

STMicroelectronics' MDMesh™ N-Channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. Key features include low input capacitance and gate charge, low gate input resistance, and best R_DS(on)*Q_g in the industry.