STGD6M65DF2

STMicroelectronics
511-STGD6M65DF2
STGD6M65DF2

Mfr.:

Paglalarawan:
IGBTs Trench gate field-stop IGBT, M series 650 V, 6 A low loss

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 3,710

Stock:
3,710 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
14 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
Packaging:
Buo Reel (Mag-order sa multiple ng 2500)

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
Cut Tape / MouseReel™
₱93.96 ₱93.96
₱59.74 ₱597.40
₱39.73 ₱3,973.00
₱31.32 ₱15,660.00
₱28.54 ₱28,540.00
Buo Reel (Mag-order sa multiple ng 2500)
₱25.46 ₱63,650.00
₱22.68 ₱113,400.00
₱22.62 ₱226,200.00
† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
STMicroelectronics
Kategorya ng Produkto: Mga IGBT
RoHS:  
Si
DPAK-3 (TO-252-3)
SMD/SMT
Single
650 V
1.55 V
- 20 V, 20 V
12 A
88 W
- 55 C
+ 175 C
STGD6M65DF2
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Tuloy-tuloy na Collector Current Ic Max: 12 A
Gate-Emitter Leakage Current: +/- 250 uA
Uri ng Produkto: IGBT Transistors
Dami ng Pack ng Pabrika: 2500
Subcategory: IGBTs
Timbang ng Unit: 330 mg
Nahanap na mga produkto:
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Mga Piniling Attribute: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.