STGP5H60DF

STMicroelectronics
511-STGP5H60DF
STGP5H60DF

Mfr.:

Paglalarawan:
IGBTs Trench gate field-stop IGBT, H series 600 V, 5 A high speed

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 931

Stock:
931
Maaaring Ipadala Agad
Inoorder:
1,000
Inaasahan 4/3/2026
Lead-Time ng Pabrika:
15
(na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱113.68 ₱113.68
₱54.58 ₱545.80
₱48.84 ₱4,884.00
₱38.74 ₱19,370.00
₱35.44 ₱35,440.00
₱32.71 ₱65,420.00
₱29.75 ₱148,750.00
₱29.52 ₱295,200.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
STMicroelectronics
Kategorya ng Produkto: Mga IGBT
RoHS:  
Si
TO-220-3
Through Hole
Single
600 V
1.5 V
- 20 V, 20 V
10 A
88 W
- 55 C
+ 175 C
STGP5H60DF
Tube
Brand: STMicroelectronics
Tuloy-tuloy na Collector Current Ic Max: 10 A
Gate-Emitter Leakage Current: +/- 250 nA
Uri ng Produkto: IGBT Transistors
Dami ng Pack ng Pabrika: 1000
Subcategory: IGBTs
Timbang ng Unit: 2 g
Nahanap na mga produkto:
Para maipakita ang mga katulad na produkto, pumili ng kahit na isang checkbox man lang
Pumili ng kahit isang checkbox sa itaas para magpakita ng katulad na produkto sa kategoryang ito.
Mga Piniling Attribute: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (VCE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.