STGW25H120DF2

STMicroelectronics
511-STGW25H120DF2
STGW25H120DF2

Mfr.:

Paglalarawan:
IGBTs Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
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Datasheet:
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May Stock: 1,693

Stock:
1,693 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
14 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱272.02 ₱272.02
₱153.12 ₱1,531.20
₱107.30 ₱10,730.00
₱103.24 ₱61,944.00
₱99.18 ₱297,540.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
STMicroelectronics
Kategorya ng Produkto: Mga IGBT
RoHS:  
Si
TO-247-3
Through Hole
Single
1.2 kV
2.1 V
- 20 V, 20 V
50 A
375 W
- 55 C
+ 175 C
STGW25H120DF2
Tube
Brand: STMicroelectronics
Tuloy-tuloy na Collector Current Ic Max: 25 A
Gate-Emitter Leakage Current: 250 nA
Uri ng Produkto: IGBT Transistors
Dami ng Pack ng Pabrika: 600
Subcategory: IGBTs
Timbang ng Unit: 38 g
Nahanap na mga produkto:
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Mga Piniling Attribute: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (VCE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

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