STGW60H65DFB

STMicroelectronics
511-STGW60H65DFB
STGW60H65DFB

Mfr.:

Paglalarawan:
IGBTs 600V 60A trench gate field-stop IGBT
Kumpletuhin ang Iyong Disenyo

Datasheet:
ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.
Higit Pang Impormasyon
Alamin pa ang tungkol sa STMicroelectronics STGW60H65DFB

May Stock: 1,196

Stock:
1,196 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
14 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱295.22 ₱295.22
₱165.88 ₱1,658.80
₱116.00 ₱11,600.00
₱108.46 ₱65,076.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
STMicroelectronics
Kategorya ng Produkto: Mga IGBT
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
1.6 V
- 20 V, 20 V
80 A
375 W
- 55 C
+ 175 C
STGW60H65DFB
Tube
Brand: STMicroelectronics
Tuloy-tuloy na Collector Current Ic Max: 60 A
Gate-Emitter Leakage Current: 250 nA
Uri ng Produkto: IGBT Transistors
Dami ng Pack ng Pabrika: 600
Subcategory: IGBTs
Timbang ng Unit: 38 g
Nahanap na mga produkto:
Para maipakita ang mga katulad na produkto, pumili ng kahit na isang checkbox man lang
Pumili ng kahit isang checkbox sa itaas para magpakita ng katulad na produkto sa kategoryang ito.
Mga Piniling Attribute: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

May di-inaasahang error na nangyari.


May tanong ka? Bisitahin ang Help Center.
Para sa mga tanong sa isang partikular na order, mag-log in sa account mo.

Kung may maranasan kang iba pang problema, kontakin kami sa 800-346-6873 o mag-email sa help@mouser.com.