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STP100N10F7

Name: STMicroelectronics STP100N10F7
Brand: STMicroelectronics
SKU: 511-STP100N10F7
Price: 157.18 PHP
Availability: InStock

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Mouser #:

511-STP100N10F7

Mfr. #:

STP100N10F7

Mfr.:

STMicroelectronics

Paglalarawan:

MOSFETs N-Ch 100V 0.0068mOhm 80A STripFETVII 150

Kumpletuhin ang Iyong Disenyo

Datasheet:

STP100N10F7 Datasheet (PDF)

ECAD Model:

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May Stock: 169

Stock:: 169

Maaaring Ipadala Agad

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Inoorder:: 1,000

Inaasahan 6/8/2026
Lead-Time ng Pabrika:: 26

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Matagal na lead time na iniulat sa produktong ito.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱157.18	₱157.18
	₱77.72	₱777.20
	₱73.08	₱7,308.00
	₱61.48	₱30,740.00
	₱51.33	₱51,330.00
	₱48.02	₱96,040.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-220-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	8 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	56 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	150 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	STripFET
Packaging:	Tube
Brand:	STMicroelectronics
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	16 ns
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	40 ns
Series:	STP100N10F7
Dami ng Pack ng Pabrika:	1000
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	46 ns
Karaniwang Tagal ng Delay ng Pag-on:	27 ns
Timbang ng Unit:	2 g

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Mga Piniling Attribute: 0

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Datasheet

STP100N10F7 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 85412101
ECCN:: EAR99

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R_DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

STripFET™ F7 Power MOSFETs

STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. STMicroelectronics STripFET F7 feature high avalanche ruggedness.