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STP33N60M2

Name: STMicroelectronics STP33N60M2
Brand: STMicroelectronics
SKU: 511-STP33N60M2
Price: 277.24 PHP
Availability: InStock

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Mouser #:

511-STP33N60M2

Mfr. #:

STP33N60M2

Mfr.:

STMicroelectronics

Paglalarawan:

MOSFETs N-CH 600V 0.108Ohm typ. 26A MDmesh M2

Kumpletuhin ang Iyong Disenyo

Datasheet:

STP33N60M2 Datasheet (PDF)

ECAD Model:

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May Stock: 771

Stock:: 771 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 14 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱277.24	₱277.24
	₱143.84	₱1,438.40
	₱131.08	₱13,108.00
	₱126.44	₱63,220.00
	₱100.34	₱100,340.00
	₱99.76	₱199,520.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-220-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	26 A
Rds On - Drain-Source Resistance:	108 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	45.5 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	190 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	9 ns
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	9.6 ns
Series:	STP33N60M2
Dami ng Pack ng Pabrika:	1000
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	109 ns
Karaniwang Tagal ng Delay ng Pag-on:	16 ns
Timbang ng Unit:	2 g

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Mga Piniling Attribute: 0

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Datasheet

STP33N60M2 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.