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STPSC10H065DI

Name: STMicroelectronics STPSC10H065DI
Brand: STMicroelectronics
SKU: 511-STPSC10H065DI
Price: 240.12 PHP
Availability: InStock

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Mouser #:

511-STPSC10H065DI

Mfr. #:

STPSC10H065DI

Mfr.:

STMicroelectronics

Paglalarawan:

SiC Schottky Diodes 650V Pwr Schottky Silicn Carbide Diode

Kumpletuhin ang Iyong Disenyo

Datasheet:

STPSC10H065DI Datasheet (PDF)

ECAD Model:

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May Stock: 632

Stock:: 632 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 19 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱240.12	₱240.12
	₱101.50	₱1,015.00
	₱96.86	₱9,686.00
	₱92.22	₱46,110.00
	₱89.32	₱89,320.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga SiC Schottky Diode
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-220AC-2
Kumpigurasyon:	Single
If - Forward Current:	22 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.98 V
Ifsm - Forward Surge Current:	90 A
Ir - Reverse Current:	85 uA
Minimum na Operating Temperature:	- 40 C
Maximum na Operating Temperature:	+ 175 C
Series:	STPSC
Packaging:	Tube
Brand:	STMicroelectronics
Uri ng Produkto:	SiC Schottky Diodes
Dami ng Pack ng Pabrika:	1000
Subcategory:	Diodes & Rectifiers
Timbang ng Unit:	2.300 g

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Mga Piniling Attribute: 0

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Datasheet

STPSC10H065DI Datasheet (PDF)

PCN

CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100101
ECCN:: EAR99

Standard Products

STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of STMicroelectronics design aids, including SPICE, IBIS models, and simulation tools, is available to make adding to a design-in easy.

STPSC Schottky Silicon-Carbide Diodes

STMicroelectronics Schottky Silicon-Carbide Diodes take advantage of SiC's superior physical characteristics over standard silicon, with four times better dynamic characteristics and 15% less forward voltage (VF). The low reverse recovery characteristics make ST's silicon-carbide diodes a key contributor to energy savings in SMPS applications and in emerging domains such as solar energy conversion, EV or HEV charging stations. They are also ideal for other applications such as welding equipment and air conditioners. STMicroelectronics SiC product portfolio includes a 20A, 600V diode, housed in a halogen-free TO-247 package, to extend its 4A to 12A, through-hole, and SMD package offer. The second generation, with a 6A, 1200V device, and a 650V series are also available.

STPSC 650V Schottky Silicon-Carbide Diodes

STMicroelectronics STPSC 650V Schottky Silicon-Carbide Diodes are ultra-high-performance power Schottky diodes. The wide bandgap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These STMicroelectronics devices are especially suited for PFC applications, boosting performance in hard switching conditions. High forward surge capability ensures good robustness during transient phases.