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STPSC406D

Name: STMicroelectronics STPSC406D
Brand: STMicroelectronics
SKU: 511-STPSC406D
Price: 66.12 PHP
Availability: OutOfStock

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Mouser #:

511-STPSC406D

Mfr. #:

STPSC406D

Mfr.:

STMicroelectronics

Paglalarawan:

SiC Schottky Diodes 600 V Power Schottky Diode

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Lifecycle:

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Datasheet:

STPSC406D Datasheet (PDF)

ECAD Model:

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Availability

Stock:: Hindi Naka-stock

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Lead-Time ng Pabrika:: 52 (na) Linggo Tinatayang oras ng paggawa sa pabrika.

Matagal na lead time na iniulat sa produktong ito.

Ipasok ang Dami:

Minimum: 1000 Mga Multiple: 1000

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

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Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱66.12	₱66,120.00

Katulad na Produkto

Mfr.:

STMicroelectronics

Mfr. #:

STPSC4H065D

Paglalarawan:

SiC Schottky Diodes 650V pwr Schottky 4A 650V VRRM

Paghambingin ang Kasalukuyang Piyesa

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga SiC Schottky Diode
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-220AC-2
Kumpigurasyon:	Single
If - Forward Current:	4 A
Vrrm - Repetitive Reverse Voltage:	600 V
Vf - Forward Voltage:	1.9 V
Ifsm - Forward Surge Current:	14 A
Ir - Reverse Current:	50 uA
Minimum na Operating Temperature:	- 40 C
Maximum na Operating Temperature:	+ 175 C
Series:	STPSC
Packaging:	Tube
Brand:	STMicroelectronics
Bansa ng Pag-assemble:	Not Available
Bansa ng Diffusion:	Not Available
Bansang Pinagmulan:	CN
Uri ng Produkto:	SiC Schottky Diodes
Dami ng Pack ng Pabrika:	1000
Subcategory:	Diodes & Rectifiers
Timbang ng Unit:	6 g

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Mga Piniling Attribute: 0

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Datasheet

STPSC406D Datasheet (PDF)

PCN

CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 8541100901
KRHTS:: 8541109000
TARIC:: 8542399000
MXHTS:: 85423999
ECCN:: EAR99

600V Power Schottky Silicon Carbide Diode

STMicroelectronics' 600V Power Schottky Silicon Carbide Diodes are ultra high performance power Schottky diodes. They are manufactured using a silicon carbide substrate. The wide band gap material of these allows the design of a Schottky diode structured with a 600V rating. Due to the Schottky construction of these diodes no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These Power Schottky Silicon Carbide Diodes will boost the performance of PFC operations in hard switching conditions.

STPSC Schottky Silicon-Carbide Diodes

STMicroelectronics Schottky Silicon-Carbide Diodes take advantage of SiC's superior physical characteristics over standard silicon, with four times better dynamic characteristics and 15% less forward voltage (VF). The low reverse recovery characteristics make ST's silicon-carbide diodes a key contributor to energy savings in SMPS applications and in emerging domains such as solar energy conversion, EV or HEV charging stations. They are also ideal for other applications such as welding equipment and air conditioners. STMicroelectronics SiC product portfolio includes a 20A, 600V diode, housed in a halogen-free TO-247 package, to extend its 4A to 12A, through-hole, and SMD package offer. The second generation, with a 6A, 1200V device, and a 650V series are also available.