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CSD16325Q5

Name: Texas Instruments CSD16325Q5
Brand: Texas Instruments
SKU: 595-CSD16325Q5
Price: 157.76 PHP
Availability: InStock

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Mouser #:

595-CSD16325Q5

Mfr. #:

CSD16325Q5

Mfr.:

Texas Instruments

Paglalarawan:

MOSFETs N-Channel NexFET Pow er MOSFET

Datasheet:

CSD16325Q5 Datasheet

ECAD Model:

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Alamin pa ang tungkol sa Texas Instruments CSD16325Q5

May Stock: 4,355

Stock:: 4,355 Maaaring Ipadala Agad

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 12 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Packaging:

Buo Reel (Mag-order sa multiple ng 2500)

Cut Tape

MouseReel™ (+₱350.00)

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
Cut Tape / MouseReel™ ^†
	₱157.76	₱157.76
	₱102.08	₱1,020.80
	₱70.76	₱7,076.00
	₱57.13	₱28,565.00
	₱52.20	₱52,200.00
Buo Reel (Mag-order sa multiple ng 2500)
	₱47.44	₱118,600.00
	₱46.69	₱233,450.00
25,000	Quote

† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Texas Instruments
Kategorya ng Produkto:	Mga MOSFET
RoHS:
REACH - SVHC:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	VSON-CLIP-8
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	60 A
Rds On - Drain-Source Resistance:	2.2 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 10 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Qg - Gate Charge:	18 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.1 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	12 ns
Forward Transconductance - Min:	159 S
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	16 ns
Series:	CSD16325Q5
Dami ng Pack ng Pabrika:	2500
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	32 ns
Karaniwang Tagal ng Delay ng Pag-on:	10.5 ns
Timbang ng Unit:	118 mg

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Mga Piniling Attribute: 0

I-filter ang Dokumento:

PCN

Product Catalogs

Power Management Guide 2018 (Rev. R)

SPICE Models

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8542399000
MXHTS:: 85423999
ECCN:: EAR99

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET™ Power MOSFET: CSD16325Q5

The Texas Instruments CSD16325Q5 N-Channel NexFET™ Power MOSFET is designed to minimize losses in power conversion applications. The TI CSD16325Q5 NexFET MOSFET is optimized for 5V gate drive applications and boasts ultralow Gate Charge Total and Gate Charge Gate to Drain and low thermal resistance. The TI CSD16325Q5 NexFET Power MOSFET is avalanche rated and optimized for Synchronous FET applications and Point-of-Load Synchronous Buck in networking, telecom, and computing systems.

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.