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CSD86336Q3D

Name: Texas Instruments CSD86336Q3D
Brand: Texas Instruments
SKU: 595-CSD86336Q3D
Price: 115.42 PHP
Availability: InStock

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Mouser #:

595-CSD86336Q3D

Mfr. #:

CSD86336Q3D

Mfr.:

Texas Instruments

Paglalarawan:

MOSFETs 25-V N channel sync hronous buck NexFET A 595-CSD86336Q3DT

Datasheet:

CSD86336Q3D Datasheet

ECAD Model:

I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

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May Stock: 660

Stock:: 660 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 12 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Packaging:

Buo Reel (Mag-order sa multiple ng 2500)

Cut Tape

MouseReel™ (+₱350.00)

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
Cut Tape / MouseReel™ ^†
	₱115.42	₱115.42
	₱75.98	₱759.80
	₱51.16	₱5,116.00
	₱40.66	₱20,330.00
	₱37.64	₱37,640.00
Buo Reel (Mag-order sa multiple ng 2500)
	₱33.58	₱83,950.00
	₱31.32	₱156,600.00

† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Texas Instruments
Kategorya ng Produkto:	Mga MOSFET
RoHS:
REACH - SVHC:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	VSON-CLIP-8
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	9.1 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1.1 V
Qg - Gate Charge:	3.8 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	6 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	2 ns
Forward Transconductance - Min:	40 S
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	10 ns
Series:	CSD86336Q3D
Dami ng Pack ng Pabrika:	2500
Subcategory:	Transistors
Uri ng Transistor:	Power MOSFET
Karaniwang Tagal ng Delay ng Pag-off:	7 ns
Karaniwang Tagal ng Delay ng Pag-on:	5 ns
Timbang ng Unit:	99.500 mg

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Mga Piniling Attribute: 0

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Datasheet

CSD86336Q3D Datasheet

SPICE Models

CSD863336Q3D PSpice Model (Rev. B)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.