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CSD86350Q5D

Name: Texas Instruments CSD86350Q5D
Brand: Texas Instruments
SKU: 595-CSD86350Q5D
Price: 229.68 PHP
Availability: InStock

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Mouser #:

595-CSD86350Q5D

Mfr. #:

CSD86350Q5D

Mfr.:

Texas Instruments

Paglalarawan:

MOSFETs Synch Buck NexFET Pw r Block MOSFET

Datasheet:

CSD86350Q5D Datasheet

ECAD Model:

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Alamin pa ang tungkol sa Texas Instruments CSD86350Q5D

May Stock: 7,323

Stock:: 7,323 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 12 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Packaging:

Buo Reel (Mag-order sa multiple ng 2500)

Cut Tape

MouseReel™ (+₱350.00)

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
Cut Tape / MouseReel™ ^†
	₱229.68	₱229.68
	₱150.22	₱1,502.20
	₱115.42	₱11,542.00
	₱98.02	₱49,010.00
	₱90.48	₱90,480.00
Buo Reel (Mag-order sa multiple ng 2500)
	₱80.04	₱200,100.00

† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

Alternatibong Packaging

Mfr. # ng Piyesa:

CSD86350Q5DT

Packaging:

Reel, Cut Tape, MouseReel

Availability:

May Stock

Presyo:

₱275.50

Min:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Texas Instruments
Kategorya ng Produkto:	Mga MOSFET
RoHS:
REACH - SVHC:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	SON-8
Polarity ng Transistor:	N-Channel
Dami ng Channel:	2 Channel
Vds - Drain-Source Breakdown Voltage:	25 V
Id - Continuous Drain Current:	40 A
Rds On - Drain-Source Resistance:	5 mOhms, 1.1 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	900 mV
Qg - Gate Charge:	10.7 nC, 25 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	13 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	NexFET
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Texas Instruments
Kumpigurasyon:	Dual
Kit sa Pag-develop:	CSD86350Q5DEVM-604, TPS53219EVM-690
Tagal ng Pagbagsak:	2.3 ns, 21 ns
Forward Transconductance - Min:	103 S, 132 S
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	21 ns, 23 ns
Series:	CSD86350Q5D
Dami ng Pack ng Pabrika:	2500
Subcategory:	Transistors
Uri ng Transistor:	2 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	9 ns, 24 ns
Karaniwang Tagal ng Delay ng Pag-on:	8 ns, 9 ns
Timbang ng Unit:	170 mg

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Mga Piniling Attribute: 0

I-filter ang Dokumento:

Datasheet

CSD86350Q5D Datasheet

Images

Function Diagram

PCN

SPICE Models

CSD86350Q5D PSpice Model (Rev. A)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Texas Instruments NexFET™ Power MOSFET

The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs, which improves power density. With ultra-low Qg & Qgd, these devices enable a higher switching frequency with up to double frequency for the same power loss versus competitor's devices. This feature provides improved transient response for fewer output capacitors that will be needed. There is a size reduction, by up to 1/2, for the output filter (caps & inductor). Texas Instruments NexFET Power Block ICs come with a unique ground pad lead frame and pinout, which simplifies the customer's layout and improves operating and thermal performance.

NexFET N-Channel Power MOSFETs

Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra-low Qg and Qd and low thermal resistance. The Texas Instruments NexFET N-Channel Power MOSFETs are avalanche rated and come in a SON 5mm x 6mm plastic package.