TPS28226DRBR

Texas Instruments
595-TPS28226DRBR
TPS28226DRBR

Mfr.:

Paglalarawan:
Gate Drivers Hi Fre 4A Sink Synch MOSFET Driver A 595 A 595-TPS28226DRBT

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

Availability

Stock:
Hindi Naka-stock
Lead-Time ng Pabrika:
6 (na) Linggo Tinatayang oras ng paggawa sa pabrika.
Minimum: 3000   Mga Multiple: 3000
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
LIBRENG Ipapadala ang Produktong Ito

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
Buo Reel (Mag-order sa multiple ng 3000)
₱44.95 ₱134,850.00
₱42.86 ₱257,160.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Texas Instruments
Kategorya ng Produkto: Mga Gate Driver
RoHS:  
High-Side, Low-Side
SMD/SMT
SON-8
2 Driver
2 Output
6 A
4 V
8.8 V
10 ns
5 ns
- 40 C
+ 125 C
TPS28226
Reel
Brand: Texas Instruments
Mga Feature: Synchronous Rectification
Maximum na Tagal ng Delay sa Pag-Off: 14 ns
Maselan sa Moisture: Yes
Pd - Power Dissipation: 2.58 W
Uri ng Produkto: Gate Drivers
Dami ng Pack ng Pabrika: 3000
Subcategory: PMIC - Power Management ICs
Teknolohiya: Si
Timbang ng Unit: 24 mg
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Mga Piniling Attribute: 0

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CNHTS:
8542319090
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

TPS28226 8-Pin Sink Synchronous MOSFET Drivers

Texas Instruments TPS28226 8-Pin High-Frequency 4A Sink Synchronous MOSFET Drivers is optimized for a variety of high-current one and multi-phase DC-to-DC converters. The Texas Instruments TPS28226 MOSFET Drivers have a small-size and low EMI emissions, providing a high-efficiency solution. Efficiency is achieved by up to 8.8V gate drive voltage, 14ns adaptive dead-time control, 14ns propagation delays, and high-current 2A source with 4A sink drive capability. The 0.4Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold. This feature ensures no shoot-through current at high dV/dt phase node transitions. Charged by an internal diode, the bootstrap capacitor allows the use of N-channel MOSFETs in a half-bridge configuration.