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FCPF067N65S3

Name: onsemi FCPF067N65S3
Brand: onsemi
SKU: 512-FCPF067N65S3
Price: 464.58 PHP
Availability: InStock

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Mouser #:

512-FCPF067N65S3

Mfr. #:

FCPF067N65S3

Mfr.:

onsemi

Paglalarawan:

MOSFETs SuperFET3 650V 67 mOhm

Datasheet:

FCPF067N65S3 Datasheet

ECAD Model:

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May Stock: 4,573

Stock:: 4,573 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 17 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱464.58	₱464.58
	₱238.38	₱2,383.80
	₱221.56	₱22,156.00
	₱199.52	₱99,760.00
	₱198.94	₱198,940.00
	₱197.78	₱593,340.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga MOSFET
RoHS:
REACH - SVHC:
Teknolohiya:	Si
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-220-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	44 A
Rds On - Drain-Source Resistance:	67 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	78 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	46 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	SuperFET III
Packaging:	Tube
Brand:	onsemi
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	16 ns
Forward Transconductance - Min:	29 S
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	52 ns
Series:	FCPF067N65S3
Dami ng Pack ng Pabrika:	1000
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	89 ns
Karaniwang Tagal ng Delay ng Pag-on:	26 ns
Timbang ng Unit:	2 g

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Mga Piniling Attribute: 0

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Datasheet

FCPF067N65S3 Datasheet

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Solutions for Energy Infrastructure

onsemi Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. onsemi offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.

SuperFET® III MOSFETs

onsemi SuperFET® III MOSFETs are high voltage Super-Junction (SJ) N-Channel MOSFETs designed to meet the high power density, system efficiency, and exceptional reliability requirements of telecom, server, electric vehicle (EV) charger and solar products. These devices combine best-in-class reliability, low EMI, excellent efficiency, and superior thermal performance to make them an ideal choice for high-performance applications. Complementing their performance characteristics, the broad range of package options offered by onsemi SuperFET III MOSFETs gives product designers high flexibility, particularly with size-constrained designs.