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FFSH40120ADN-F155

Name: onsemi FFSH40120ADN-F155
Brand: onsemi
SKU: 512-FFSH40120ADNF155
Price: 945.4 PHP
Availability: InStock

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Mouser #:

512-FFSH40120ADNF155

Mfr. #:

FFSH40120ADN-F155

Mfr.:

onsemi

Paglalarawan:

SiC Schottky Diodes 1200V SiC SBD 40A

Datasheet:

FFSH40120ADN-F155 Datasheet

ECAD Model:

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Higit Pang Impormasyon

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May Stock: 125

Stock:: 125 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 11 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱945.40	₱945.40
	₱722.10	₱7,221.00
	₱644.38	₱64,438.00
	₱643.22	₱289,449.00
10,350	Quote

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga SiC Schottky Diode
RoHS:
REACH - SVHC:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-3
Kumpigurasyon:	Dual Anode Common Cathode
If - Forward Current:	40 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.45 V
Ifsm - Forward Surge Current:	135 A
Ir - Reverse Current:	200 uA
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Series:	FFSH40120ADN
Packaging:	Tube
Brand:	onsemi
Pd - Power Dissipation:	220 W
Uri ng Produkto:	SiC Schottky Diodes
Dami ng Pack ng Pabrika:	450
Subcategory:	Diodes & Rectifiers
Pangalang pangkalakal:	EliteSiC
Vr - Reverse Voltage:	1.2 kV
Mga Alias ng # ng Piyesa :	FFSH40120ADN_F155
Timbang ng Unit:	6.390 g

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Datasheet

FFSH40120ADN-F155 Datasheet

PCN

CNHTS:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
TARIC:: 8541100000
MXHTS:: 8541100101
ECCN:: EAR99

FFSH SiC Schottky Diodes

onsemi FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of +175°C. These onsemi Schottky Diodes have no switching loss and a high surge current capacity. FFSH diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.

1200V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 1200V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Silicon Carbide Schottky Diodes

onsemi Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost. onsemi offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.

Energy Storage Solutions

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