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FFSH2065BDN-F085

Name: onsemi FFSH2065BDN-F085
Brand: onsemi
SKU: 863-FFSH2065BDN-F085
Price: 548.68 PHP
Availability: InStock

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Mouser #:

863-FFSH2065BDN-F085

Mfr. #:

FFSH2065BDN-F085

Mfr.:

onsemi

Paglalarawan:

SiC Schottky Diodes 650V 20A SIC SBD

Datasheet:

FFSH2065BDN-F085 Datasheet

ECAD Model:

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Higit Pang Impormasyon

Alamin pa ang tungkol sa onsemi FFSH2065BDN-F085

May Stock: 39

Stock:: 39 Maaaring Ipadala Agad

May nangyaring di-inaasahang error. Subukan ulit mamaya.
Lead-Time ng Pabrika:: 8 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ang mga dami na higit pa sa 39 ay sasailalim sa minimum na mga kinakailangan sa pag-order.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱548.68	₱548.68
	₱292.90	₱2,929.00
	₱292.32	₱35,078.40
	₱284.20	₱144,942.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga SiC Schottky Diode
RoHS:
REACH - SVHC:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-3
Kumpigurasyon:	Dual Anode Common Cathode
If - Forward Current:	20 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.38 V
Ifsm - Forward Surge Current:	42 A
Ir - Reverse Current:	40 uA
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Series:	FFSH2065BDN_F085
Kuwalipikasyon:	AEC-Q101
Packaging:	Tube
Brand:	onsemi
Pd - Power Dissipation:	65 W
Uri ng Produkto:	SiC Schottky Diodes
Dami ng Pack ng Pabrika:	30
Subcategory:	Diodes & Rectifiers
Pangalang pangkalakal:	EliteSiC
Vr - Reverse Voltage:	650 V
Timbang ng Unit:	5.457 g

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Datasheet

FFSH2065BDN-F085 Datasheet

PCN

USHTS:: 8541100080
ECCN:: EAR99

FFSPx065BDN-F085 Automotive SiC Schottky Diodes

onsemi FFSPx065BDN-F085 Automotive Silicon Carbide (SiC) Schottky Diodes are AEC-Q101-qualified devices designed to leverage the advantages of Silicon Carbide (Si) over Silicon. The FFSPx065BDN-F085 SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also offer temperature-independent switching and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size/cost.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.