FFSP1065B

onsemi
863-FFSP1065B
FFSP1065B

Mfr.:

Paglalarawan:
SiC Schottky Diodes SIC DIODE 650V 10A

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 850

Stock:
850 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
13 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱229.68 ₱229.68
₱150.22 ₱1,502.20
₱110.78 ₱11,078.00
₱98.02 ₱49,010.00
₱87.58 ₱87,580.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
onsemi
Kategorya ng Produkto: Mga SiC Schottky Diode
RoHS:  
Through Hole
TO-220-2
Single
10 A
650 V
1.38 V
45 A
40 uA
- 55 C
+ 175 C
FFSP1065B
Tube
Brand: onsemi
Pd - Power Dissipation: 75 W
Uri ng Produkto: SiC Schottky Diodes
Dami ng Pack ng Pabrika: 50
Subcategory: Diodes & Rectifiers
Pangalang pangkalakal: EliteSiC
Vr - Reverse Voltage: 650 V
Timbang ng Unit: 3.698 g
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Mga Piniling Attribute: 0

CNHTS:
8541100000
USHTS:
8541100080
ECCN:
EAR99

650V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 650V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

D2 EliteSiC Diodes

onsemi D2 EliteSiC Diodes are a range of high-performance diodes designed for applications requiring a voltage rating of 650V. The onsemi D2 is available in various packages, including DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, and TO-247-3. These diodes offer low capacitive charge (QC) and are optimized for high-speed switching with low forward voltage. These features make the diodes ideal for power factor correction (PFC) and output rectification applications.

FFSP SiC Schottky Diodes

onsemi FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature-independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.