FFSP15120A

onsemi
512-FFSP15120A
FFSP15120A

Mfr.:

Paglalarawan:
SiC Schottky Diodes 1200V SiC SBD 15A

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 570

Stock:
570 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
12 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱441.38 ₱441.38
₱239.54 ₱2,395.40
₱219.24 ₱21,924.00
₱186.76 ₱93,380.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
onsemi
Kategorya ng Produkto: Mga SiC Schottky Diode
RoHS:  
Through Hole
TO-220-2
Single
15 A
1.2 kV
1.45 V
115 A
200 uA
- 55 C
+ 175 C
FFSP15120A
Tube
Brand: onsemi
Pd - Power Dissipation: 300 W
Uri ng Produkto: SiC Schottky Diodes
Dami ng Pack ng Pabrika: 50
Subcategory: Diodes & Rectifiers
Pangalang pangkalakal: EliteSiC
Vr - Reverse Voltage: 1.2 kV
Timbang ng Unit: 2.160 g
Nahanap na mga produkto:
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Mga Piniling Attribute: 0

CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99

Silicon Carbide Schottky Diodes

onsemi Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  onsemi offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

FFSP SiC Schottky Diodes

onsemi FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature-independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.

D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.