FFSP20120A

onsemi
512-FFSP20120A
FFSP20120A

Mfr.:

Paglalarawan:
SiC Schottky Diodes 1200V 20A Silicon Carbide Schtky Diode

Datasheet:
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Katangian ng Produkto Value ng Attribute Pumili ng Attribute
onsemi
Kategorya ng Produkto: Mga SiC Schottky Diode
RoHS:  
Through Hole
TO-220-2
Single
20 A
1.2 kV
1.45 V
135 A
200 uA
- 55 C
+ 175 C
1.2 kV
FFSP20120A
Tube
Brand: onsemi
Pd - Power Dissipation: 340 W
Uri ng Produkto: SiC Schottky Diodes
Dami ng Pack ng Pabrika: 50
Subcategory: Diodes & Rectifiers
Pangalang pangkalakal: EliteSiC
Timbang ng Unit: 2.160 g
Nahanap na mga produkto:
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Mga Piniling Attribute: 0

Mga Kodigo sa Pagsunod
CNHTS:
8541100000
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
TARIC:
8541100000
MXHTS:
8541100101
ECCN:
EAR99
Mga Klasipikasyon ng Pinagmulan
Bansang Pinagmulan:
Korea, Republic of
Bansang Pinagmulan ng Pag-assemble:
China
Bansa ng Diffusion:
Korea, Republic of
Ang bansa ay maaaring magbago sa oras ng pagpapadala.

FFSP SiC Schottky Diodes

onsemi FFSP SiC (Silicon Carbide) Schottky Diodes are designed to leverage the advantages of Silicon Carbide over Silicon (Si) devices. FFSP SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also feature temperature-independent switching characteristics and excellent thermal performance. This results in improved system efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost.

1200V EliteSiC (Silicon Carbide) Schottky Diodes

onsemi 1200V EliteSiC (Silicon Carbide) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.

Wide Bandgap EliteSiC (Silicon Carbide) Devices

onsemi Wide Bandgap EliteSiC (Silicon Carbide) Devices provide superior switching performance and higher reliability compared to silicon. The system benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost. The EliteSiC portfolio includes 650V, 1200V, and 1700V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.

Silicon Carbide Schottky Diodes

onsemi Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  onsemi offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.

D1 EliteSiC Diodes

onsemi D1 EliteSiC Diodes is a high-performance and versatile solution designed for modern power electronics applications. The onsemi D1 features voltage ratings of 650V, 1200V, and 1700V. These diodes offer the flexibility to meet various design requirements. Featuring different packages, such as D2PAK2, D2PAK3, TO-220-2, TO-247-2, and TO-247-3, the D1 EliteSiC Diodes provide designers with options to optimize board space and thermal performance.

May Stock: 829

Stock:
829 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
21 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱782.83 ₱782.83
₱459.51 ₱4,595.10
₱412.27 ₱41,227.00
₱398.16 ₱199,080.00

May di-inaasahang error na nangyari.


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