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IGB110S101XTMA1

Name: Infineon IGB110S101XTMA1
Brand: Infineon Technologies
SKU: 726-IGB110S101XTMA1
Price: 137.46 PHP
Availability: InStock

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Mouser #:

726-IGB110S101XTMA1

Mfr. #:

IGB110S101XTMA1

Mfr.:

Infineon Technologies

Paglalarawan:

GaN FETs MV GAN DISCRETES

Lifecycle:

Bagong Produkto:

Bago mula sa manufacturer na ito.

Datasheet:

IGB110S101XTMA1 Datasheet (PDF)

ECAD Model:

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May Stock: 2,250

Stock:: 2,250 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 16 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱137.46	₱137.46
	₱88.16	₱881.60
	₱60.90	₱6,090.00
	₱51.56	₱25,780.00
	₱43.85	₱43,850.00
Buo Reel (Mag-order sa multiple ng 5000)
	₱37.24	₱186,200.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	GaN FETs
RoHS:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	PG-VSON-4
Polarity ng Transistor:	HEMT
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	23 A
Vgs - Gate-Source Voltage:	- 4 V, + 5.5 V
Vgs th - Gate-Source Threshold Voltage:	2.9 V
Qg - Gate Charge:	3.4 nC
Minimum na Operating Temperature:	- 40 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	15 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	CoolGaN
Brand:	Infineon Technologies
Kumpigurasyon:	Single
Packaging:	Reel
Packaging:	Cut Tape
Produkto:	Transistors
Uri ng Produkto:	GaN FETs
Series:	100V G3
Dami ng Pack ng Pabrika:	5000
Subcategory:	Transistors
Teknolohiya:	GaN
Uri ng Transistor:	1 N-Channel
Uri:	CoolGaN Transistor
Mga Alias ng # ng Piyesa :	IGB110S101 SP005751574

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Mga Piniling Attribute: 0

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Datasheet

IGB110S101XTMA1 Datasheet (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CoolGaN™ G3 Transistors

Infineon Technologies CoolGaN™ G3 Transistors are designed to deliver superior performance in high-power density applications. These transistors feature a very low on-state resistance, enabling efficient power conversion and reduced energy losses. Available in four voltage options (60V, 80V, 100V, or 120V), the Infineon CoolGaN G3 Transistors deliver ultra-fast switching with an ultra-low gate/output charge. The transistors are housed in compact PQFN packages, which enhance thermal management and support dual-side cooling, ensuring reliable operation even under demanding conditions. These features make CoolGaN G3 Transistors a top choice for applications such as telecom, data center power supplies, and industrial power systems.

CoolGaN™ 100V G3 Transistors

Infineon Technologies CoolGaN™ 100V G3 Transistors are normally OFF, enhancement-mode (e-mode) power transistors in compact housing. These transistors feature low on-state resistance, making the devices an ideal choice for reliable performance in demanding high-current and high-voltage applications. The CoolGaN transistors are designed to improve thermal management. Typical applications include audio amplifier solutions, photovoltaic, telecommunication infrastructure, e‑Mobility, robotics, and drones.