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MR0A08BYS35

Name: Everspin Technologies MR0A08BYS35
Brand: Everspin Technologies
SKU: 936-MR0A08BYS35
Price: 1165.8 PHP
Availability: InStock

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Mouser #:

936-MR0A08BYS35

Mfr. #:

MR0A08BYS35

Mfr.:

Everspin Technologies

Paglalarawan:

MRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM

Datasheet:

MR0A08BYS35 Datasheet (PDF)

ECAD Model:

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Higit Pang Impormasyon

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May Stock: 156

Stock:: 156 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 27 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱1,165.80	₱1,165.80
	₱1,080.54	₱10,805.40
	₱1,046.90	₱26,172.50
	₱1,021.38	₱51,069.00
	₱985.42	₱98,542.00
	₱847.96	₱228,949.20
	₱829.40	₱447,876.00
1,080	Quote

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Everspin Technologies
Kategorya ng Produkto:	MRAM
RoHS:
Package / Case:	TSOP-II-44
Uri ng Interface:	Parallel
Laki ng Memory:	1 Mbit
Organisasyon:	128 k x 8
Lapad ng Data Bus:	8 bit
Oras ng Pag-access:	35 ns
Supply Voltage - Min:	3 V
Supply Voltage - Max:	3.6 V
Supply Current ng Pagpapatakbo:	25 mA, 55 mA
Minimum na Operating Temperature:	0 C
Maximum na Operating Temperature:	+ 70 C
Series:	MR0A08B
Packaging:	Tray
Brand:	Everspin Technologies
Maselan sa Moisture:	Yes
Isitilo ng Mounting:	SMD/SMT
Pd - Power Dissipation:	600 mW
Uri ng Produkto:	MRAM
Dami ng Pack ng Pabrika:	135
Subcategory:	Memory & Data Storage
Pangalang pangkalakal:	Parallel I/O (x8)
Timbang ng Unit:	11.146 g

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Datasheet

MR0A08BYS35 Datasheet (PDF)

PCN

Alternative Format for Trace Codes (PDF)

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CNHTS:: 8542329010
CAHTS:: 8542320090
USHTS:: 8542320071
JPHTS:: 8542320312
KRHTS:: 8542321040
MXHTS:: 8542320299
ECCN:: EAR99

MR0A08B, MR0D08B, & MR0A16A 1Mb Parallel MRAM

Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance.

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.