MR2A08ACYS35

Everspin Technologies
936-MR2A08ACYS35
MR2A08ACYS35

Mfr.:

Paglalarawan:
MRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 405

Stock:
405 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
27 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
LIBRENG Ipapadala ang Produktong Ito

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱2,067.70 ₱2,067.70
₱1,912.84 ₱19,128.40
₱1,851.36 ₱46,284.00
₱1,805.54 ₱90,277.00
₱1,741.74 ₱174,174.00
₱1,696.50 ₱458,055.00
1,080 Quote

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Everspin Technologies
Kategorya ng Produkto: MRAM
RoHS:  
TSOP-II-44
Parallel
4 Mbit
512 k x 8
8 bit
35 ns
3 V
3.6 V
30 mA, 90 mA
- 40 C
+ 85 C
MR2A08A
Tray
Brand: Everspin Technologies
Maselan sa Moisture: Yes
Isitilo ng Mounting: SMD/SMT
Pd - Power Dissipation: 600 mW
Uri ng Produkto: MRAM
Dami ng Pack ng Pabrika: 135
Subcategory: Memory & Data Storage
Pangalang pangkalakal: Parallel I/O (x8)
Timbang ng Unit: 5 g
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Mga Piniling Attribute: 0

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CNHTS:
8542329010
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320312
KRHTS:
8542321040
MXHTS:
8542320299
ECCN:
EAR99

MR2A08A & MR2A16A 4Mb Parallel MRAM

Everspin Technologies MR2A08A and MR2A16A 4Mb Parallel MRAM devices offer SRAM compatible 35ns read/write timing with unlimited endurance. The MR2A08A series products are 4,194,304-bit Magnetoresistive Random Access Memory (MRAM) devices organized as 524,288 words of 8 bits. 

Magnetoresistive Random Access Memory (MRAM)

Everspin Technologies Magnetoresistive Random Access Memory (MRAM) delivers significantly long data retention of >20 years and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification. These MRAM devices feature a 1 transistor – 1 magnetic tunnel junction (1T-1MTJ) architecture. Everspin MRAM products consist of serial SPI MRAMs and parallel interface MRAMs. The serial SPI MRAMs offer ideal memory for applications that must store and retrieve data and programs quickly using a minimum number of pins. The parallel interface MRAMs are SRAM compatible with 35ns/45ns access timing and unlimited endurance.