SSM3K324R,LF

Toshiba
757-SSM3K324RLF
SSM3K324R,LF

Mfr.:

Paglalarawan:
MOSFETs N-Ch U-MOSVI FET ID 4A 30VDSS 200pF

Datasheet:
ECAD Model:
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Alamin pa ang tungkol sa Toshiba SSM3K324R,LF

May Stock: 25,968

Stock:
25,968 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
26 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:
Packaging:
Buo Reel (Mag-order sa multiple ng 3000)

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
Cut Tape / MouseReel™ †
₱22.04 ₱22.04
₱13.51 ₱135.10
₱8.58 ₱858.00
₱6.38 ₱3,190.00
₱5.68 ₱5,680.00
Buo Reel (Mag-order sa multiple ng 3000)
₱4.70 ₱14,100.00
₱4.23 ₱25,380.00
₱3.60 ₱32,400.00
₱3.13 ₱75,120.00
† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
Toshiba
Kategorya ng Produkto: Mga MOSFET
RoHS:  
Si
N-Channel
1 Channel
U-MOSVII-H
Reel
Cut Tape
MouseReel
Brand: Toshiba
Kumpigurasyon: Single
Uri ng Produkto: MOSFETs
Series: SSM3K324
Dami ng Pack ng Pabrika: 3000
Subcategory: Transistors
Uri ng Transistor: 1 N-Channel
Timbang ng Unit: 11 mg
Nahanap na mga produkto:
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Mga Piniling Attribute: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low RDS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

Discrete Solid State Drive (SSD) Solutions

Toshiba Discrete Solid State Drive (SSD) Solutions feature a broad product lineup that meets current requirements with TVS, Shottkey Barrier Diodes (SBD), LDOs, Load Switch ICs, and the powerful eFuse IC. These SSDs can parse through data quicker than a traditional Hard Disk Drive (HDD). As SSD technology improves, it will require power circuitry that meets increasingly rigorous power demands and protection that keeps essential data safe from failures. Toshiba offers a comprehensive lineup of load switches and MOSFETs for controlling power inputs, protection ICs, and diodes designed to handle abnormal input power conditions and overvoltage surges during hotplug.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.

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