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SSM6N67NU,LF

Name: Toshiba SSM6N67NU,LF
Brand: Toshiba
SKU: 757-SSM6N67NULF
Price: 35.38 PHP
Availability: InStock

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Mouser #:

757-SSM6N67NULF

Mfr. #:

SSM6N67NU,LF

Mfr.:

Toshiba

Paglalarawan:

MOSFETs LowON Res MOSFET ID=4A VDSS=30V

Datasheet:

SSM6N67NU,LF Datasheet (PDF)

ECAD Model:

I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

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May Stock: 135,208

Stock:: 135,208 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 11 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Packaging:

Buo Reel (Mag-order sa multiple ng 3000)

Cut Tape

MouseReel™ (+₱350.00)

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
Cut Tape / MouseReel™ ^†
	₱35.38	₱35.38
	₱21.98	₱219.80
	₱14.09	₱1,409.00
	₱11.72	₱5,860.00
	₱9.74	₱9,740.00
Buo Reel (Mag-order sa multiple ng 3000)
	₱8.47	₱25,410.00
	₱7.48	₱44,880.00
	₱6.84	₱61,560.00
	₱6.73	₱161,520.00

† ₱350.00 Idaragdag at kakalkulahin sa iyong shopping cart ang bayarin sa MouseReel™ Hindi makakansela at maisasauli ang mga order na MouseReel™ ↩

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Toshiba
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	UDFN-6
Polarity ng Transistor:	N-Channel
Dami ng Channel:	2 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	4 A
Rds On - Drain-Source Resistance:	39.1 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 12 V
Vgs th - Gate-Source Threshold Voltage:	400 mV
Qg - Gate Charge:	3.2 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Kuwalipikasyon:	AEC-Q101
Pangalang pangkalakal:	U-MOSVII-H
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Kumpigurasyon:	Dual
Bansa ng Pag-assemble:	TH
Bansa ng Diffusion:	JP
Bansang Pinagmulan:	TH
Forward Transconductance - Min:	6 S
Uri ng Produkto:	MOSFETs
Series:	SSM6N67NU
Dami ng Pack ng Pabrika:	3000
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	17 ns
Karaniwang Tagal ng Delay ng Pag-on:	26 ns
Timbang ng Unit:	8.500 mg

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Mga Piniling Attribute: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

I-filter ang Dokumento:

Datasheet

SSM6N67NU,LF Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Semi Power MOSFETs

Toshiba Semi Power MOSFETs are designed with advanced technologies, achieving low R_ON characteristics. The Semi Power MOSFETs are very compact and thin at 2 x 2mm and 2.9 x 2.8mm, offering the low loss and compact size MOSFETs required for battery-powered devices such as smartphones and wearable devices.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.