STGWA15M120DF3

STMicroelectronics
511-STGWA15M120DF3
STGWA15M120DF3

Mfr.:

Paglalarawan:
IGBTs Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

ECAD Model:
I-download ang libreng Library Loader para i-convert ang file na ito para sa iyong ECAD Tool. Matuto nang higit pa tungkol sa ECAD Model.

May Stock: 467

Stock:
467 Maaaring Ipadala Agad
Lead-Time ng Pabrika:
14 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱298.70 ₱298.70
₱198.36 ₱1,983.60
₱157.76 ₱15,776.00
₱111.94 ₱67,164.00
₱110.78 ₱332,340.00
₱109.62 ₱591,948.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
STMicroelectronics
Kategorya ng Produkto: Mga IGBT
RoHS:  
Si
TO-247-3
Through Hole
Single
1.2 kV
1.85 V
- 20 V, 20 V
30 A
283 W
- 55 C
+ 175 C
M
Tube
Brand: STMicroelectronics
Gate-Emitter Leakage Current: 250 nA
Uri ng Produkto: IGBT Transistors
Dami ng Pack ng Pabrika: 600
Subcategory: IGBTs
Timbang ng Unit: 38 g
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Mga Piniling Attribute: 0

                        
ST NCNR & NON Warrantied

Stock on hand has no manufacture warranty.

If the end customer requires additional support please
process the request through your local Mouser
sales representative.

5-1013-36

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

M Series 1200V Trench Gate Field-Stop IGBTs

STMicroelectronics M Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. These devices represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. A positive VCE(sat) temperature coefficient and tight parameter distribution also result in safer paralleling operation. Typical applications for these devices include industrial drives, UPS, solar, and welding.