STP80N240K6

STMicroelectronics
511-STP80N240K6
STP80N240K6

Mfr.:

Paglalarawan:
MOSFETs N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package

ECAD Model:
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May Stock: 75

Stock:
75
Maaaring Ipadala Agad
Inoorder:
1,000
Inaasahan 9/21/2026
Lead-Time ng Pabrika:
13
(na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.
Minimum: 1   Mga Multiple: 1
Presyo ng Unit:
₱-.--
Ext. Presyo:
₱-.--
Est. Taripa:

Presyo (PHP)

Dami Presyo ng Unit
Ext. Presyo
₱357.28 ₱357.28
₱193.14 ₱1,931.40
₱176.90 ₱17,690.00
₱147.90 ₱73,950.00
₱143.84 ₱143,840.00

Katangian ng Produkto Value ng Attribute Pumili ng Attribute
STMicroelectronics
Kategorya ng Produkto: Mga MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
800 V
10 A
220 mOhms
- 30 V, 30 V
4 V
25.9 nC
- 55 C
+ 150 C
140 W
Enhancement
MDmesh
Tube
Brand: STMicroelectronics
Tagal ng Pagbagsak: 12 s
Uri ng Produkto: MOSFETs
Tagal ng Pagtaas: 5.3 ns
Dami ng Pack ng Pabrika: 1000
Subcategory: Transistors
Uri ng Transistor: 1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off: 47.8 ns
Karaniwang Tagal ng Delay ng Pag-on: 16 ns
Timbang ng Unit: 2 g
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Mga Piniling Attribute: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

STP80N240K6 MDmesh K6 Power MOSFET

STMicroelectronics STP80N240K6 MDmesh K6 Power MOSFET is based on the ultimate MDmesh K6 technology built on 20 years of STM experience on super junction technology. The high voltage N-channel power MOSFET offers an ultra-low gate charge and excellent RDS(on) x area. The ST STP80N240K6 800V Power MOSFET features best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.

N-Channel MDmesh K6 Power MOSFETs

STMicroelectronics N-Channel MDmesh K6 Power MOSFETs are Zener-protected and 100% avalanche-tested. These power MOSFETs feature 800V minimum drain-source breakdown voltage, ±30V gate-source voltage, and -55°C to 150°C operating junction temperature range. The MDmesh K6 Power MOSFETs also feature 5V/ns peak diode recovery voltage slope, 100A/µs peak diode recovery current slope, and 120V/ns MOSFET dv/dt ruggedness. Typical applications include notebook and AIO, flyback converters, adapters for tablets, and LED lighting.