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TK1R4F04PB,LXGQ

Name: Toshiba TK1R4F04PB,LXGQ
Brand: Toshiba
SKU: 757-TK1R4F04PB,LXGQ
Price: 150.8 PHP
Availability: InStock

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Mouser #:

757-TK1R4F04PB,LXGQ

Mfr. #:

TK1R4F04PB,LXGQ

Mfr.:

Toshiba

Paglalarawan:

MOSFETs 205W 1MHz Automotive; AEC-Q101

Datasheet:

TK1R4F04PB,LXGQ Datasheet

ECAD Model:

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May Stock: 1,831

Stock:: 1,831 Maaaring Ipadala Agad

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Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱150.80	₱150.80
	₱112.52	₱1,125.20
	₱81.20	₱8,120.00
	₱78.30	₱39,150.00
Buo Reel (Mag-order sa multiple ng 1000)
	₱64.96	₱64,960.00
	₱63.80	₱127,600.00
	₱63.22	₱632,200.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Toshiba
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	SMD/SMT
Package / Case:	TO-220SM-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	160 A
Rds On - Drain-Source Resistance:	1.35 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	103 nC
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	205 W
Channel Mode:	Enhancement
Kuwalipikasyon:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Toshiba
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	23 ns
Maselan sa Moisture:	Yes
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	14 ns
Series:	U-MOSIX-H
Dami ng Pack ng Pabrika:	1000
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	82 ns
Karaniwang Tagal ng Delay ng Pag-on:	47 ns
Mga Alias ng # ng Piyesa :	TK1R4F04PB,LXGQ(O
Timbang ng Unit:	1.070 g

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Mga Piniling Attribute: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

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Datasheet

TK1R4F04PB,LXGQ Datasheet

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Automotive U-MOSIX-H Power MOSFETs

Toshiba Automotive U-MOSIX-H Power MOSFETs are 40V N-channel power MOSFETs ideal for automotive applications. These devices are housed in a small, low-resistance SOP Advance (WF) package. They feature low on-resistance, which can reduce conduction loss. The U-MOSIX-H series also lowers switching noise compared with Toshiba Electronic Devices and Storage Corporation’s previous series (U-MOSIV).

Automotive Devices

Toshiba Automotive Devices offer an extensive lineup of MOSFETs, optical isolation, transistors, and diodes, to cover various automotive applications in 12V to 48V battery systems. In addition, Toshiba offers automotive-grade motor control drivers. Toshiba automotive devices are AEC-Q100 and AEC-Q101 qualified.

Automotive AEC-Q101 Qualified Power MOSFETs

Toshiba Automotive AEC-Q101 Qualified Power MOSFETs is an extensive lineup of Power MOSFETs covering various automotive applications in 12V to 48V battery systems. Toshiba has been in the discrete automotive industry since the 1960s, starting with rectifiers and then Automotive MOSFETs in the 1990s. With performance and reliability, all of Toshiba’s automotive products go above and beyond AEC-Q101 standards.

U-MOSIX-H Low Voltage Enhancement Mode MOSFETs

Toshiba U-MOSIX-H Low Voltage N-Channel Enhancement Mode MOSFETs are high-efficiency MOSFETs that are specifically designed for use in the secondary side of AC-DC power supplies. This includes notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays. It also includes DC-DC power supplies for communication equipment, servers and data centers. They feature high-speed switching, small gate charge, and low drain-source on-resistance. These MOSFETs are fabricated with the latest Gen-8 and Gen-9 trench MOS processes. The U-MOSIX-H Low Voltage MOSFETs will help improve the efficiency of power supplies.
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