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UF3SC065040B7S

Name: onsemi UF3SC065040B7S
Brand: onsemi
SKU: 431-UF3SC065040B7S
Price: 1010.94 PHP
Availability: InStock

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Mouser #:

431-UF3SC065040B7S

Mfr. #:

UF3SC065040B7S

Mfr.:

onsemi

Paglalarawan:

SiC MOSFETs 650V/40MOSICFETG3TO263-7

Datasheet:

UF3SC065040B7S Datasheet

ECAD Model:

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May Stock: 738

Stock:: 738 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 26 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ang mga dami na higit pa sa 738 ay sasailalim sa minimum na mga kinakailangan sa pag-order.

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Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱1,010.94	₱1,010.94
	₱718.62	₱7,186.20
	₱672.80	₱67,280.00
Buo Reel (Mag-order sa multiple ng 800)
	₱628.14	₱502,512.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
Isitilo ng Mounting:	SMD/SMT
Package / Case:	D2PAK-7
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	43 A
Rds On - Drain-Source Resistance:	42 mOhms
Vgs - Gate-Source Voltage:	- 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	6 V
Qg - Gate Charge:	43 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	195 W
Channel Mode:	Enhancement
Pangalang pangkalakal:	SiC FET
Brand:	onsemi
Kumpigurasyon:	Single
Tagal ng Pagbagsak:	9 ns, 12 ns
Maselan sa Moisture:	Yes
Packaging:	Reel
Packaging:	Cut Tape
Produkto:	SiC FETs
Uri ng Produkto:	SiC MOSFETS
Tagal ng Pagtaas:	24 ns, 27 ns
Series:	UF3SC
Dami ng Pack ng Pabrika:	800
Subcategory:	Transistors
Teknolohiya:	SiC
Uri:	SiC FET
Karaniwang Tagal ng Delay ng Pag-off:	45 ns, 47 ns
Karaniwang Tagal ng Delay ng Pag-on:	22 ns
Timbang ng Unit:	4.675 g

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Datasheet

UF3SC065040B7S Datasheet

PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

UF3SC High-Performance SiC FETs in D2-PAK

onsemi UF3SC High-Performance SiC FETs in D2-PAK-7L (7-lead Kelvin package) are based on a unique 'cascode' circuit configuration and feature excellent reverse recovery. This circuit configuration includes a normally-on SiC JFET to be co-packaged with Si MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These high-performance SiC FETs operate at 175°C maximum temperature, 43nC low gate charge, and 5V typical threshold voltage. Typical applications include telecom and server power, motor drives, induction heating, and industrial power supplies.

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

UF3SC 650V and 1200V High-Performance SiC FETs

onsemi UF3SC 650V and 1200V High-Performance SiC FETs are silicon carbide devices with low R_DS(on) of 7mΩ to 45mΩ built for fast switching speeds and lower switching losses. These devices are based on a unique cascode circuit configuration and exhibit an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. onsemi UF3SC FETs operate at -55°C to +175°C temperature range and a -20V to +20V gate-source voltage range. These SiC FETs are ideal for electric-vehicle (EV) charging, photovoltaic (PV) inverters, motor drives, switch-mode power supplies, power factor correction (PFC) modules, and induction heating. The onsemi UF3SC SiC FETs are available in TO-247-3L and TO-247-4L package options for faster switching and clean gate waveforms.