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UF3SC120009K4S

Name: onsemi UF3SC120009K4S
Brand: onsemi
SKU: 431-UF3SC120009K4S
Price: 3811.18 PHP
Availability: InStock

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Mouser #:

431-UF3SC120009K4S

Mfr. #:

UF3SC120009K4S

Mfr.:

onsemi

Paglalarawan:

SiC MOSFETs 1200V/9MOSICFETG3TO247-4

Datasheet:

UF3SC120009K4S Datasheet

ECAD Model:

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May Stock: 515

Stock:: 515 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 31 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

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Ext. Presyo:

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Est. Taripa:

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Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱3,811.18	₱3,811.18
	₱2,876.80	₱28,768.00
1,020	Quote

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	onsemi
Kategorya ng Produkto:	Mga SiC MOSFET
RoHS:
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-4
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	120 A
Rds On - Drain-Source Resistance:	11 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	234 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	789 W
Channel Mode:	Enhancement
Kuwalipikasyon:	AEC-Q101
Pangalang pangkalakal:	SiC FET
Brand:	onsemi
Kumpigurasyon:	Single
Packaging:	Tube
Uri ng Produkto:	SiC MOSFETS
Series:	UF3SC
Dami ng Pack ng Pabrika:	30
Subcategory:	Transistors
Teknolohiya:	SiC
Timbang ng Unit:	6 g

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Datasheet

UF3SC120009K4S Datasheet

Models

UF3SC120009K4S SPICE (Text)

PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

High-Performance SiC FETs

onsemi High-Performance SiC FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, and excellent cost-effectiveness. The components are offered in standard thru-hole (including Kelvin) and surface mount packages. The family comprises the UF4C/SC, UJ4C/SC, UJ3C, and UF3C/SC series and is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device.

UF3SC 650V and 1200V High-Performance SiC FETs

onsemi UF3SC 650V and 1200V High-Performance SiC FETs are silicon carbide devices with low R_DS(on) of 7mΩ to 45mΩ built for fast switching speeds and lower switching losses. These devices are based on a unique cascode circuit configuration and exhibit an ultra-low gate charge. The cascode configuration employs a normally-on SiC JFET co-packaged with a Silicon MOSFET to produce a normally-off SiC FET device. The UF3SC FETs feature standard gate-drive characteristics that allow a true "drop-in replacement" to Si IGBTs, Si FETs, SiC MOSFETs, or Si super-junction devices. These SiC FETs include low intrinsic capacitance and excellent reverse recovery. onsemi UF3SC FETs operate at -55°C to +175°C temperature range and a -20V to +20V gate-source voltage range. These SiC FETs are ideal for electric-vehicle (EV) charging, photovoltaic (PV) inverters, motor drives, switch-mode power supplies, power factor correction (PFC) modules, and induction heating. The onsemi UF3SC SiC FETs are available in TO-247-3L and TO-247-4L package options for faster switching and clean gate waveforms.