STPSC 650V Schottky Silicon-Carbide Diodes

STMicroelectronics STPSC 650V Schottky Silicon-Carbide Diodes are ultra-high-performance power Schottky diodes. The wide bandgap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. These STMicroelectronics devices are especially suited for PFC applications, boosting performance in hard switching conditions. High forward surge capability ensures good robustness during transient phases.

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Dami RoHS ECAD Model Isitilo ng Mounting
Package / Case
Kumpigurasyon
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum na Operating Temperature
Maximum na Operating Temperature
Kuwalipikasyon
Packaging
STMicroelectronics SiC Schottky Diodes 650 V, 4A power Schottky High Surge silicon carbide diode
Datasheet
2,376May Stock
5,000Inaasahan 4/6/2026
Available ang MouseReel
Min.: 1
Mult.: 1
Reel: 5,000

SMD/SMT SMBF-2 Single 10 A 650 V 1.3 V 30 A 4 uA - 55 C + 175 C Reel, Cut Tape, MouseReel
STMicroelectronics SiC Schottky Diodes Automotive 650 V, 4A power Schottky High Surge silicon carbide diode
Datasheet
5,000Inaasahan 3/30/2026
Available ang MouseReel
Min.: 1
Mult.: 1
Reel: 5,000

SMD/SMT SMBF-2 Single 10 A 650 V 1.3 V 30 A 4 uA - 55 C + 175 C AEC-Q101 Reel, Cut Tape, MouseReel