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STWA60N043DM9

Name: STMicroelectronics STWA60N043DM9
Brand: STMicroelectronics
SKU: 511-STWA60N043DM9
Price: 632.2 PHP
Availability: InStock

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Mouser #:

511-STWA60N043DM9

Mfr. #:

STWA60N043DM9

Mfr.:

STMicroelectronics

Paglalarawan:

MOSFETs N-channel 600 V, 38 mOhm typ., 56 A MDmesh DM9 Power MOSFET

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Datasheet:

STWA60N043DM9 Datasheet (PDF)

ECAD Model:

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May Stock: 82

Stock:: 82 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 18 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱632.20	₱632.20
	₱454.72	₱4,547.20
	₱403.10	₱48,372.00
	₱393.24	₱200,552.40
	₱364.82	₱372,116.40
2,520	Quote

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	STMicroelectronics
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-247-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	56 A
Rds On - Drain-Source Resistance:	43 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	78.6 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 150 C
Pd - Power Dissipation:	312 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	STMicroelectronics
Uri ng Produkto:	MOSFETs
Series:	MDmesh DM9
Dami ng Pack ng Pabrika:	30
Subcategory:	Transistors
Uri ng Transistor:	1 N Channel
Timbang ng Unit:	6.100 g

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Datasheet

STWA60N043DM9 Datasheet (PDF)

PCN

Product Change Notification 2025-7-29 (PDF)

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh™ M9 Power MOSFETs

STMicroelectronics MDmesh™ M9 Power MOSFETs feature enhanced device structure, low ON resistance, and low gate charge values. These power MOSFETs offer high reverse diode dv/dt and MOSFET dv/dt ruggedness, high power density, and low conduction losses. The MDmesh M9 Power MOSFETs also offer high switching speed, high efficiency, and low switching power losses. These power MOSFETs are designed with innovative high-voltage super-junction technology that delivers impressive Figure of Merit ((FoM). The high FoM enables higher power levels and density for more compact solutions. Typical applications include servers, telecom data centers, 5G power stations, microinverters, and fast chargers.

STP60N043DM9 MDmesh DM9 Power MOSFET

STMicroelectronics STP60N043DM9 MDmesh DM9 Power MOSFET is designed for medium/high voltage MOSFETs featuring very low R_DS(on) per area coupled with a fast-recovery diode. The device implements innovative super-junction MDmesh DM9 technology offering a multi-drain manufacturing process that allows for an enhanced device structure.