100V to 150V StrongIRFET™ Power MOSFETs

Infineon Technologies 100V to 150V StrongIRFET™ Power MOSFETs are optimized for low on-resistance (RDS(on)) and high current capability. These devices offer an RDS(on) as low as 1.3mΩ at 100V and a current handling capability as high as 209A at 100V. These features result in reduced conduction losses and increased power density while still accommodating legacy designs. The StrongIRFET Power MOSFETs are ideal for low-frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications, including DC motors, battery management systems, inverters, and DC-DC converters.  

Mga Resulta: 11
Pumili Larawan # ng Piyesa
 Mfr.
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Dami RoHS ECAD Model Teknolohiya
Isitilo ng Mounting
Package / Case
Polarity ng Transistor
Dami ng Channel
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum na Operating Temperature
Maximum na Operating Temperature
Pd - Power Dissipation
Channel Mode
Kuwalipikasyon
Packaging

Infineon Technologies MOSFETs MOSFET_(120V 300V)
Datasheet
1,327May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 171 A 4.8 mOhms - 30 V, 30 V 3 V 227 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 Tube


Infineon Technologies MOSFETs IR FET >60-400V
Datasheet
2,556May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 100 V 180 A 4.5 mOhms - 20 V, 20 V 2 V 150 nC - 55 C + 175 C 370 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET >80 - 100V
Datasheet
4,251May Stock
Min.: 1
Mult.: 1
Si Through Hole N-Channel 1 Channel 100 V 209 A 1.28 mOhms - 20 V, 20 V 3.8 V 330 nC - 55 C + 175 C 556 W Enhancement Tube


Infineon Technologies MOSFETs IFX FET >100-150V
Datasheet
2,864May Stock
Min.: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 150 V 203 A 2.7 mOhms - 20 V, 20 V 4.6 V 160 nC - 55 C + 175 C 556 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET >100-150V
Datasheet
895May Stock
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 186 A 4.5 mOhms - 20 V, 20 V 4.6 V 80 nC - 55 C + 175 C 341 W Enhancement Tube

Infineon Technologies MOSFETs MOSFT 100V 51A 25mOhm 66.7nCAC
Datasheet
3,059May Stock
2,800Inoorder
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 100 V 51 A 25 mOhms - 20 V, 20 V 1.8 V 66.7 nC - 55 C + 175 C 180 W Enhancement Tube
Infineon Technologies IRFP4468PBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V
Datasheet
412May Stock
3,200Inoorder
Min.: 1
Mult.: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 100 V 290 A 2.6 mOhms - 20 V, 20 V 2 V 360 nC - 55 C + 175 C 520 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET >80 - 100V
Datasheet
6,000Inoorder
Min.: 1
Mult.: 1

Si Through Hole N-Channel 1 Channel 100 V 203 A 1.7 mOhms - 20 V, 20 V 3.8 V 168 nC - 55 C + 175 C 341 W Enhancement Tube


Infineon Technologies MOSFETs IR FET >60-400V
Datasheet
754Inaasahan 2/24/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 150 V 171 A 5.9 mOhms - 20 V, 20 V 3 V 151 nC - 55 C + 175 C 517 W Enhancement Tube
Infineon Technologies IRFP4310ZPBFXKMA1
Infineon Technologies MOSFETs IR FET >60-400V
Datasheet
380Inaasahan 4/23/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247AC-3 N-Channel 1 Channel 100 V 120 A 6 mOhms - 20 V, 20 V 4 V 120 nC - 55 C + 175 C 280 W Enhancement Tube

Infineon Technologies MOSFETs MOSFET_(120V 300V)
Datasheet
Lead-Time para sa Hindi Naka-stock 22 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 150 V 171 A 5.9 mOhms - 30 V, 30 V 5 V 227 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 Tube