Silicon Carbide (SiC) MOSFETs

APC-E Silicon Carbide (SiC) MOSFETs are designed to deliver high power, high frequency, and unmatched performance for demanding applications. These MOSFETs are available in 650V and 1200V variants and feature a low forward voltage drop, high switching speeds, and robust reliability, making the MOSFETs ideal for industrial power supplies, energy storage, motor driving, data centers, server farms, and electric vehicle (EV) charging. These APC-E SiC MOSFETs are engineered to improve energy efficiency, reduce system size and weight, and enable modern system architectures. The devices are paired with custom-designed gate drivers to ensure optimal performance and reliability.

Mga Resulta: 20
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode
APC-E SiC MOSFETs 650V 50mR, TO-247-4L, Industrial Grade 288May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E SiC MOSFETs 1200V 75mR, TO-247-4L, Automotive Grade 300May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E SiC MOSFETs 1200V 75mR, TO-247-4L, Industrial Grade 300May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 27 A 98 mOhms - 10 V, 25 V 4.2 V 40 nC - 55 C + 175 C 151 W Enhancement
APC-E SiC MOSFETs 650V 50mR, TO-247-4L, Automotive Grade 300May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 44 A 65 mOhms - 10 V, 25 V 4.2 V 45 nC - 55 C + 175 C 198 W Enhancement
APC-E SiC MOSFETs 650V 27mR, TO-247-4L, Automotive Grade 300May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC MOSFETs 1200V 30mR, TO-247-4L, Automotive Grade 300May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 57 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement
APC-E SiC MOSFETs 1200V 13mR, TO247-4L, Industrial Grade 300May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 160 A 16 mOhms - 10 V, 25 V 3.6 V 213 nC - 55 C + 175 C 750 W Enhancement
APC-E SiC MOSFETs 1200V 13mR, TO247-4L, Automotive Grade 300May Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 145 A 13 mOhms 18 V + 175 C
APC-E SiC MOSFETs 650V 27mR, SAPKG-9L, Automotive Grade
600Inaasahan 8/28/2026
Min.: 1
Mult.: 1
Reel: 600

SMD/SMT SAPKG-9L N-Channel 1 Channel 650 V 81 A 35 mOhms - 10 V, 25 V 4.2 V 87 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC MOSFETs 650V 35mR, TO-247-4L, Automotive Grade
300Inaasahan 4/3/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4L 650 V
APC-E SiC MOSFETs 1200V 20mR, TO-247-4L, Industrial Grade
300Inaasahan 4/3/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 88 A 26 mOhms - 10 V, 25 V 4.2 V 154 nC - 55 C + 175 C 403 W Enhancement
APC-E SiC MOSFETs 650V 27mR, TO-247-4L, Industrial Grade
300Inaasahan 3/27/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 76 A 35 mOhms - 10 V, 25 V 4.2 V 80 nC - 55 C + 175 C 298 W Enhancement
APC-E SiC MOSFETs 1200V 30mR, TO-247-4L, Industrial Grade
300Inaasahan 3/27/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 58 A 42 mOhms - 10 V, 25 V 4.2 V 91 nC - 55 C + 175 C 278 W Enhancement

APC-E SiC MOSFETs 650V 65mR, TO-247-3L, Automotive Grade
300Inaasahan 5/1/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3L 650 V
APC-E SiC MOSFETs 650V 35mR, TO-247-4L, Industrial Grade
300Inaasahan 4/3/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4L 650 V

APC-E SiC MOSFETs 650V 65mR, TO-247-3L, Industrial Grade
300Inaasahan 5/1/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3L 650 V
APC-E SiC MOSFETs 1700V 1000mR, TO247-3L, Industrial Grade
300Inaasahan 3/27/2026
Min.: 1
Mult.: 1

Through Hole TO-247-3 1.7 kV 6.8 A 1 kOhms 20 V + 175 C
APC-E SiC MOSFETs 1200V 75mR, TO247-4L, Automotive Grade Lead-Time para sa Hindi Naka-stock 15 (na) Linggo
Min.: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 41 A 75 mOhms 15 V + 175 C
APC-E SiC MOSFETs 1200V 32mR, TO247-4L, Industrial Grade Lead-Time para sa Hindi Naka-stock 15 (na) Linggo
Min.: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 77 A 32 mOhms 15 V + 175 C
APC-E SiC MOSFETs 1200V 75mR, TO247-4L, Industrial Grade Lead-Time para sa Hindi Naka-stock 15 (na) Linggo
Min.: 1
Mult.: 1

Through Hole TO-247-4 1.2 kV 35 A 75 mOhms 15 V + 175 C