OptiMOS™ 5 Power MOSFETs

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom, and client applications in the computing industry. They can also be used in synchronous rectification in switched-mode power supplies (SMPS) and motor control, solar microinverters, and fast switching DC/DC converter applications.

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 Mfr.
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Dami RoHS ECAD Model Teknolohiya
Isitilo ng Mounting
Package / Case
Polarity ng Transistor
Dami ng Channel
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum na Operating Temperature
Maximum na Operating Temperature
Pd - Power Dissipation
Channel Mode
Kuwalipikasyon
Pangalang pangkalakal
Packaging
Infineon Technologies MOSFETs IFX FET 60V
Datasheet
10,000Inaasahan 4/23/2026
Available ang MouseReel
Min.: 1
Mult.: 1
Reel: 5,000

Si SMD/SMT N-Channel 1 Channel 60 V 137 A 3 mOhms - 20 V, 20 V 3.3 V 39 nC - 55 C + 175 C 107 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies IPP020N06NXKSA1
Infineon Technologies MOSFETs IFX FET 60V
Datasheet
Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 120 A 2 mOhms - 20 V, 20 V 3.3 V 106 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies IPP027N08N5XKSA1
Infineon Technologies MOSFETs IFX FET > 60-80V
Datasheet
Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2.7 mOhms - 20 V, 20 V 3.8 V 99 nC - 55 C + 175 C 214 W Enhancement Tube
Infineon Technologies IPP040N06NXKSA1
Infineon Technologies MOSFETs IFX FET 60V
Datasheet
Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 60 V 69 A 4 mOhms - 20 V, 20 V 3.3 V 38 nC - 55 C + 175 C 36 W Enhancement Tube
Infineon Technologies IPP020N08N5XKSA1
Infineon Technologies MOSFETs IFX FET > 60-80V
Datasheet
Lead-Time para sa Hindi Naka-stock 13 (na) Linggo
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2 mOhms - 20 V, 20 V 3.8 V 178 nC - 55 C + 175 C 375 W Enhancement Tube
Infineon Technologies IPP023N08N5XKSA1
Infineon Technologies MOSFETs IFX FET > 60-80V
Datasheet
Lead-Time para sa Hindi Naka-stock 14 (na) Linggo
Min.: 500
Mult.: 500

Si Through Hole TO-220-3 N-Channel 1 Channel 80 V 120 A 2.3 mOhms - 20 V, 20 V 3.8 V 133 nC - 55 C + 175 C 300 W Enhancement Tube