Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

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IXYS MOSFETs 86 Amps 200V 29 Rds
Datasheet
Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 30

MOSFETs Si Through Hole TO-3P-3
IXYS MOSFETs TO3P 250V 86A N-CH TRENCH
Datasheet
Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 30

MOSFETs Si Through Hole TO-3P-3
IXYS MOSFETs 96 Amps 250V 36 Rds
Datasheet
Lead-Time para sa Hindi Naka-stock 23 (na) Linggo
Min.: 300
Mult.: 30

MOSFETs Si Through Hole TO-3P-3