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IRFB4020PBF

Name: Infineon IRFB4020PBF
Brand: Infineon Technologies
SKU: 942-IRFB4020PBF
Price: 107.88 PHP
Availability: InStock

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Mouser #:

942-IRFB4020PBF

Mfr. #:

IRFB4020PBF

Mfr.:

Infineon Technologies

Paglalarawan:

MOSFETs MOSFT 200V 100mOhm 18A 18nC Qg for Aud

Datasheet:

IRFB4020PBF Datasheet (PDF)

ECAD Model:

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May Stock: 4,320

Stock:: 4,320 Maaaring Ipadala Agad

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Lead-Time ng Pabrika:: 20 (na) Linggo Tinatayang oras ng paggawa sa pabrika para sa mga bilang na mas marami kaysa ipinakita.

Ipasok ang Dami:

Minimum: 1 Mga Multiple: 1

Presyo ng Unit:

₱-.--

Ext. Presyo:

₱-.--

Est. Taripa:

Presyo (PHP)

Dami	Presyo ng Unit	Ext. Presyo
	₱107.88	₱107.88
	₱51.74	₱517.40
	₱46.23	₱4,623.00
	₱36.66	₱18,330.00
	₱33.52	₱33,520.00
	₱32.77	₱65,540.00

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Katangian ng Produkto	Value ng Attribute	Pumili ng Attribute
Manufacturer:	Infineon
Kategorya ng Produkto:	Mga MOSFET
RoHS:
Teknolohiya:	Si
Isitilo ng Mounting:	Through Hole
Package / Case:	TO-220-3
Polarity ng Transistor:	N-Channel
Dami ng Channel:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	18 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	18 nC
Minimum na Operating Temperature:	- 55 C
Maximum na Operating Temperature:	+ 175 C
Pd - Power Dissipation:	100 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	Infineon Technologies
Kumpigurasyon:	Single
Bansa ng Pag-assemble:	CN
Bansa ng Diffusion:	US
Bansang Pinagmulan:	KR
Tagal ng Pagbagsak:	6.3 ns
Forward Transconductance - Min:	24 S
Uri ng Produkto:	MOSFETs
Tagal ng Pagtaas:	12 ns
Dami ng Pack ng Pabrika:	1000
Subcategory:	Transistors
Uri ng Transistor:	1 N-Channel
Karaniwang Tagal ng Delay ng Pag-off:	16 ns
Karaniwang Tagal ng Delay ng Pag-on:	7.8 ns
Timbang ng Unit:	2 g

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Mga Piniling Attribute: 0

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Datasheet

IRFB4020PBF Datasheet (PDF)

Application Notes

Product Catalogs

SPICE Models

Spice Model - IRFB4020PBF

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Power MOSFETs

Infineon pioneered HEXFET power MOSFET technology, developing and introducing the first hexagonal topology MOSFETs in 1979. These developments were granted a broad patent just four years later, and since that time, most MOSFET manufacturers have licensed the designs and processes to enter this marketplace. IR products exhibit the lowest MOSFET on-resistance available on the market for similar components in their class, enabling power conversion subsystem designs that exhibit unequaled efficiency. IR combines state-of-the-art silicon technology with innovative packaging technology. IR POWIRTAB™, Super-220™, and Super-247™ packages allow up to 20A more current per device in the same footprint than standard packages, increasing power density. Compatible with standard surface-mount soldering techniques, IR's FlipFET® packaging technology offers a 100% silicon-to-footprint ratio with the same performance as a conventional package three times as big, making it the ideal solution for portable devices such as phones or notebook PCs. IR's DirectFET® packaging revolutionizes thermal management in the footprint of a standard SO-8 by drawing heat away from the board through the top of the package. As a result, DirectFET MOSFETs can double the current density while cutting thermal management costs in half in high-current circuits that power next-generation microprocessors.

200V to 250V HEXFET® Power MOSFETs

Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and R_DS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.