CFD7 CoolMOS™ MOSFETs

Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power switch-mode power supply (SMPS) applications include server, telecom, and EV charging stations.

Mga Resulta: 75
Pumili Larawan # ng Piyesa Mfr. Paglalarawan Datasheet Availability Pagpepresyo (PHP) I-filter ang mga resulta sa talahanayan ayon sa unit price batay sa iyong dami. Dami RoHS ECAD Model Teknolohiya Isitilo ng Mounting Package / Case Polarity ng Transistor Dami ng Channel Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum na Operating Temperature Maximum na Operating Temperature Pd - Power Dissipation Channel Mode Kuwalipikasyon Pangalang pangkalakal Packaging
Infineon Technologies MOSFETs AUTOMOTIVE_COOLMOS 382May Stock
1,000Inaasahan 5/28/2026
Min.: 1
Mult.: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 11 A 230 mOhms - 20 V, 20 V 4 V 23 nC - 40 C + 150 C 63 W Enhancement AEC-Q101 CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW 420May Stock
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 22 A 115 mOhms - 20 V, 20 V 3.5 V 42 nC - 40 C + 150 C 124 W Enhancement Reel, Cut Tape

Infineon Technologies MOSFETs HIGH POWER_NEW 189May Stock
480Inaasahan 5/7/2026
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 40 mOhms - 20 V, 20 V 3.5 V 109 nC - 55 C + 150 C 227 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW 268May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 18 A 125 mOhms - 20 V, 20 V 3.5 V 36 nC - 55 C + 150 C 92 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW 73May Stock
Min.: 1
Mult.: 1
: 1,000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 16 A 145 mOhms - 20 V, 20 V 4.5 V 31 nC - 55 C + 150 C 83 W Enhancement Reel, Cut Tape

Infineon Technologies MOSFETs HIGH POWER_NEW 15May Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 16 A 145 mOhms - 20 V, 20 V 3.5 V 31 nC - 55 C + 150 C 83 W Enhancement Tube
Infineon Technologies MOSFETs LOW POWER_NEW 2May Stock
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 14 A 200 mOhms - 20 V, 20 V 4.5 V 23 nC - 40 C + 150 C 81 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_NEW
4,000Inaasahan 3/4/2027
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 67 A 35 mOhms - 20 V, 20 V 4 V 109 nC - 55 C + 150 C 351 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW
2,990Inaasahan 6/11/2026
Min.: 1
Mult.: 1
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 16 A 160 mOhms - 20 V, 20 V 3.5 V 31 nC - 40 C + 150 C 95 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW
1,000Inaasahan 5/7/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 18 A 125 mOhms - 20 V, 20 V 3.5 V 36 nC - 55 C + 150 C 92 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW
500Inaasahan 10/29/2026
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 16 A 145 mOhms - 20 V, 20 V 3.5 V 31 nC - 55 C + 150 C 83 W Enhancement Tube

Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time para sa Hindi Naka-stock 8 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 21 A 105 mOhms - 20 V, 20 V 3.5 V 42 nC - 55 C + 150 C 106 W Enhancement Tube
Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time 20 (na) Linggo
Min.: 1
Mult.: 1
: 750

Si SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 68 A 35 mOhms - 20 V, 20 V 4.5 V 108 nC - 55 C + 150 C 367 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 750
Mult.: 750
: 750

Si HDSOP-22 600 V Reel
Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1,700
Mult.: 1,700
: 1,700

Si SMD/SMT HDSOP-10 N-Channel 1 Channel 600 V 61 A 45 mOhms - 20 V, 20 V 4.5 V 79 nC - 55 C + 150 C 379 W Enhancement Reel
Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time para sa Hindi Naka-stock 15 (na) Linggo
Min.: 1
Mult.: 1
: 1,700

Si SMD/SMT HDSOP-10 N-Channel 1 Channel 650 V 40 A 75 mOhms - 20 V, 20 V 4.5 V 51 nC - 55 C + 150 C 266 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time para sa Hindi Naka-stock 19 (na) Linggo
Min.: 750
Mult.: 750
: 750

Si SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 112 A 20 mOhms - 20 V, 30 V 4.5 V 186 nC - 55 C + 150 C 543 W Enhancement Reel
Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time para sa Hindi Naka-stock 19 (na) Linggo
Min.: 750
Mult.: 750
: 750

Si - 20 V, 20 V CoolMOS Reel
Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time para sa Hindi Naka-stock 39 (na) Linggo
Min.: 3,000
Mult.: 3,000
: 3,000

Si SMD/SMT VSON-4 N-Channel 1 Channel 650 V 21 A 130 mOhms - 20 V, 20 V 4.5 V 36 nC - 40 C + 150 C 127 W Enhancement Reel
Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time 19 (na) Linggo
Min.: 1
Mult.: 1
: 2,000

Si SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 21 A 125 mOhms - 20 V, 20 V 4 V 8 nC - 55 C + 150 C 127 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time para sa Hindi Naka-stock 17 (na) Linggo
Min.: 2,000
Mult.: 2,000
: 2,000

Si CoolMOS Reel
Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time 17 (na) Linggo
Min.: 1
Mult.: 1
: 2,000

Si CoolMOS Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time 18 (na) Linggo
Min.: 1
Mult.: 1
: 2,000

Si CoolMOS Reel, Cut Tape

Infineon Technologies MOSFETs AUTOMOTIVE_COOLMOS Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 24 A 115 mOhms - 20 V, 20 V 4.5 V 41 nC - 55 C + 150 C 114 W Enhancement AEC-Q101 CoolMOS Tube
Infineon Technologies MOSFETs HIGH POWER_NEW Lead-Time para sa Hindi Naka-stock 20 (na) Linggo
Min.: 1,700
Mult.: 1,700
: 1,700

Si SMD/SMT HDSOP-10-1 N-Channel 1 Channel 600 V 27 A 125 mOhms - 20 V, 20 V 4.5 V 31 nC - 55 C + 150 C 176 W Enhancement Reel